Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, School of Materials Science and Engineering, Tongji University, 4800, Caoan Road, Shanghai, 201804, China.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, 100190, China.
Adv Mater. 2017 May;29(17). doi: 10.1002/adma.201605887. Epub 2017 Mar 1.
Compared to commercially available p-type PbTe thermoelectrics, SnTe has a much bigger band offset between its two valence bands and a much higher lattice thermal conductivity, both of which limit its peak thermoelectric figure of merit, zT of only 0.4. Converging its valence bands or introducing resonant states is found to enhance the electronic properties, while nanostructuring or more recently introducing interstitial defects is found to reduce the lattice thermal conductivity. Even with an integration of some of the strategies above, existing efforts do not enable a peak zT exceeding 1.4 and usually involve Cd or Hg. In this work, a combination of band convergence and interstitial defects, each of which enables a ≈150% increase in the peak zT, successfully accumulates the zT enhancements to be ≈300% (zT up to 1.6) without involving any toxic elements. This opens new possibilities for further improvements and promotes SnTe as an environment-friendly solution for conventional p-PbTe thermoelectrics.
与市售的 p 型 PbTe 热电材料相比,SnTe 的两个价带之间的带隙大得多,晶格热导率也高得多,这两者都限制了其最高热电优值 zT,仅为 0.4。研究发现,汇聚其价带或引入共振态可以提高电子性能,而纳米结构化或最近引入间隙缺陷则可以降低晶格热导率。即使整合了上述一些策略,现有的努力也不能使峰值 zT 超过 1.4,而且通常涉及 Cd 或 Hg。在这项工作中,带隙汇聚和间隙缺陷的结合,每一种方法都能使峰值 zT 提高约 150%,成功地将 zT 提高了约 300%(zT 高达 1.6),而不涉及任何有毒元素。这为进一步的改进开辟了新的可能性,并推动 SnTe 成为传统 p-PbTe 热电材料的环保解决方案。