Wang Jiaming, Ji Chen, Lang Jing, Xu Fujun, Zhang Lisheng, Kang Xiangning, Qin Zhixin, Yang Xuelin, Tang Ning, Wang Xinqiang, Ge Weikun, Shen Bo
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Beijing SinoGaN Semiconductor Technology Co. Ltd, Beijing, China.
Nat Commun. 2024 Oct 30;15(1):9398. doi: 10.1038/s41467-024-53857-3.
A ground-breaking roadmap of III-nitride solid-state deep-ultraviolet light emitters is demonstrated to realize the wafer-scale fabrication of devices in vertical injection configuration, from 2 to 4 inches. The epitaxial device structure is stacked on a GaN template instead of conventionally adopted AlN, where the primary concern of the tensile strain for Al-rich AlGaN on GaN is addressed via an innovative decoupling strategy, making the device structure decoupled from the underlying GaN template. Moreover, the strategy provides a protection cushion against the stress mutation during the removal of substrates. As such, large-sized wafers can be obtained without surface cracks, even after the removal of the sapphire substrates by laser lift-off. Wafer-scale fabrication of 280 nm vertical injection deep-ultraviolet light-emitting diodes is eventually demonstrated, where a light output power of 65.2 mW is achieved at a current of 200 mA, largely thanks to the significant improvement of light extraction. This work will definitely speed up the application of III-nitride solid-state deep-ultraviolet light emitters featuring high performance and scalability.
展示了一种开创性的III族氮化物固态深紫外发光器件路线图，以实现2至4英寸垂直注入配置器件的晶圆级制造。外延器件结构堆叠在GaN模板上，而非传统采用的AlN，通过创新的解耦策略解决了GaN上富铝AlGaN的拉伸应变这一主要问题，使器件结构与底层GaN模板解耦。此外，该策略为去除衬底期间的应力突变提供了保护缓冲。因此，即使通过激光剥离去除蓝宝石衬底后，也能获得无表面裂纹的大尺寸晶圆。最终展示了280nm垂直注入深紫外发光二极管的晶圆级制造，在200mA电流下实现了65.2mW的光输出功率，这很大程度上得益于光提取的显著改善。这项工作必将加速具有高性能和可扩展性的III族氮化物固态深紫外发光器件的应用。
