Lin Dongxu, Fang Jun, Li Sibo, Zhan Zhenye, Li Huan, Wang Xin, Xie Guanshui, Wang Daozeng, Huang Nuanshan, Peng Haichen, Xie Weiguang, Ono Luis K, Qi Yabing, Qiu Longbin
Shenzhen Key Laboratory of Intelligent Robotics and Flexible Manufacturing Systems, Department of Mechanical and Energy Engineering, SUSTech Energy Institute for Carbon Neutrality, Southern University of Science and Technology, Shenzhen, 518055, P. R. China.
College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou, Guangdong, 510632, P. R. China.
Adv Sci (Weinh). 2025 Jan;12(1):e2407380. doi: 10.1002/advs.202407380. Epub 2024 Nov 3.
Two-dimensional/three-dimensional (2D/3D) halide perovskite heterojunctions are widely used to improve the efficiency and stability of perovskite solar cells. However, interfacial defects between the 2D and 3D perovskites and the poor coverage of the 2D capping layer still hinder long-term stability and homogeneous charge extraction. Herein, a surface planarization strategy on 3D perovskite is developed that enables an epitaxial growth of uniform 2D/3D perovskite heterojunction via a vapor-assisted process. The homogeneous charge extraction and suppression of interfacial nonradiative recombination is achieved by forming a uniform 2D/3D interface. As a result, a stabilized power output efficiency of 25.97% is achieved by using a 3D perovskite composition with a bandgap of 1.55 eV. To demonstrate the universality of the strategy applied for different perovskites, the champion device based on a 1.57 eV bandgap 3D perovskite results in an efficiency of 25.31% with a record fill factor of 87.6%. Additionally, perovskite solar modules achieve a designated area (24.04 cm) certified efficiency of 20.75% with a high fill factor of 80.0%. Importantly, the encapsulated uniform 2D/3D modules retain 96.9% of the initial efficiency after 1246 h operational tracking under 65 °C (ISOS-L-3 protocol) and 91.1% after 862 h under the ISOS-O-1 protocol.
二维/三维（2D/3D）卤化物钙钛矿异质结被广泛用于提高钙钛矿太阳能电池的效率和稳定性。然而，2D和3D钙钛矿之间的界面缺陷以及2D覆盖层的覆盖率低，仍然阻碍了长期稳定性和均匀的电荷提取。在此，开发了一种基于3D钙钛矿的表面平面化策略，该策略通过气相辅助过程实现均匀的2D/3D钙钛矿异质结的外延生长。通过形成均匀的2D/3D界面，实现了均匀的电荷提取和界面非辐射复合的抑制。结果，使用带隙为1.55 eV的3D钙钛矿组合物实现了25.97%的稳定功率输出效率。为了证明该策略对不同钙钛矿的通用性，基于带隙为1.57 eV的3D钙钛矿的冠军器件效率为25.31%，填充因子达到创纪录的87.6%。此外，钙钛矿太阳能组件在指定面积（24.04 cm）下的认证效率为20.75%，填充因子高达80.0%。重要的是，封装后的均匀2D/3D组件在65°C下运行1246小时（ISOS-L-3协议）后保留了初始效率的96.9%，在ISOS-O-1协议下运行862小时后保留了91.1%。
