Chandrasekaran Anirudh, Rhodes Luke C, Morales Edgar Abarca, Marques Carolina A, King Phil D C, Wahl Peter, Betouras Joseph J
Department of Physics and Centre for the Science of Materials, Loughborough University, Loughborough, UK.
SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, UK.
Nat Commun. 2024 Nov 4;15(1):9521. doi: 10.1038/s41467-024-53650-2.
The properties of correlated electron materials are often intricately linked to Van Hove singularities (VHS) in the vicinity of the Fermi energy. The class of these VHS is of great importance, with higher-order ones-with power-law divergence in the density of states-leaving frequently distinct signatures in physical properties. We use a new theoretical method to detect and analyse higher-order VHS (HOVHS) in two-dimensional materials and apply it to the electronic structure of the surface layer of SrRuO. We then constrain a low energy model of the VHS of the surface layer of SrRuO against angle-resolved photoemission spectroscopy and quasiparticle interference data to analyse the VHS near the Fermi level. We show how these VHS can be engineered into HOVHS.
关联电子材料的性质通常与费米能量附近的范霍夫奇点(VHS)错综复杂地联系在一起。这些VHS类别非常重要,其中高阶VHS(态密度具有幂律发散)常常在物理性质上留下明显不同的特征。我们使用一种新的理论方法来检测和分析二维材料中的高阶VHS(HOVHS),并将其应用于SrRuO表面层的电子结构。然后,我们根据角分辨光电子能谱和准粒子干涉数据,对SrRuO表面层的VHS低能模型进行约束,以分析费米能级附近的VHS。我们展示了如何将这些VHS设计成HOVHS。