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书写障碍与记忆:对认知机制、神经关联及干预策略的洞察

Dysgraphia and Memory: Insights into the Cognitive Mechanisms, Neural Correlates, and Intervention Strategies.

作者信息

Aiswarya G S, Joseph Ponniah R

机构信息

Department of Humanities and Social Sciences, National Institute of Technology, Tiruchirappalli, Tamil Nadu, 620015, India.

出版信息

Integr Psychol Behav Sci. 2024 Dec;58(4):1778-1792. doi: 10.1007/s12124-024-09835-x. Epub 2024 Nov 7.

Abstract

Studies regarding dysgraphia, an impairment in writing, have been receiving more attention in recent research. Most studies have broadly discussed the multiple cognitive mechanisms involved in writing and its disruption leading to dysgraphia. However, little attention has been paid to the involvement of different memory systems integral to writing and its disruption in individuals with dysgraphia. Orthographic long-term memory and orthographic working memory are the two memory systems predominantly involved in the production of written expressions, and the subsequent interruption of these memory systems often leads to varied deficit profiles of dysgraphia. These disruptions have resulted from damage in the brain caused by neural injuries, neurological disorders, or epigenetic factors. The existing studies did not probe into the nuances of the disruptions of these two memory systems in dysgraphia and associated neural pathways. In order to fill this gap, the review attempts to provide a comprehensive account of dysgraphia and its association with orthographic long-term memory and orthographic working memory by comparing and contrasting their workings and patterns of disruption in the deficit profiles of dysgraphia by probing into the underlying neural correlates. Such a detailed account brings insights into pertinent intervention strategies for improving memory systems and dysgraphia. It also helps identify the limitations of the existing intervention methods like CART, ACT, or Spell-Study-Spell, leading to the proposal of improvised neuro-targeted interventions for dysgraphia.

摘要

关于书写障碍(一种书写能力受损的情况)的研究在最近的研究中受到了更多关注。大多数研究广泛讨论了书写过程中涉及的多种认知机制及其紊乱导致书写障碍的情况。然而,对于书写所必需的不同记忆系统的参与情况及其在书写障碍个体中的紊乱情况,关注甚少。正字法长期记忆和正字法工作记忆是主要参与书面表达产生的两个记忆系统,而这些记忆系统随后的中断往往会导致书写障碍的各种缺陷表现。这些紊乱是由神经损伤、神经系统疾病或表观遗传因素导致的大脑损伤引起的。现有研究并未探究书写障碍中这两个记忆系统紊乱的细微差别以及相关神经通路。为了填补这一空白,本综述试图通过比较和对比它们在书写障碍缺陷表现中的运作方式和紊乱模式,深入探究潜在的神经关联,从而全面阐述书写障碍及其与正字法长期记忆和正字法工作记忆的关联。这样详细的阐述为改善记忆系统和书写障碍的相关干预策略提供了见解。它还有助于识别现有干预方法(如认知行为疗法、接纳与承诺疗法或拼写 - 学习 - 拼写疗法)的局限性,进而提出针对书写障碍的改进型神经靶向干预措施。

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