Qiu Shuang, Amaro Augusto, Fabulyak Diana, Appleby-Millette Julien, Conover Cassidy, Zhang Dongyang, Yeddu Vishal, Cheong I Teng, Paci Irina, Saidaminov Makhsud I
Department of Chemistry, Department of Electrical and Computer Engineering, Center for Advanced Materials and Related Technologies (CAMTEC), University of Victoria, Victoria, British Columbia, V8P 5C2, Canada.
Seastar Chemicals ULC, 2061 Henry Avenue West, Sidney, BC, Canada V8L 5Z6, Canada.
Small. 2025 Jan;21(1):e2404966. doi: 10.1002/smll.202404966. Epub 2024 Nov 6.
Tin oxide (SnO) films synthesized by atomic layer deposition (ALD) are widely explored in a range of optoelectronic devices including electrochemical sensors, transistors, and photovoltaics. However, the integrity of the key ALD-SnO precursor, namely tetrakis(dimethylamido)tin (IV) (TDMASn), and its influence on the properties of ultimate films remain unexplored. Here a significant degradation of TDMASn into bis(dimethylamido)tin(II) via the Sn-imine complex is reported, and its impact on the corresponding films and devices is examined. It is found, surprisingly, that this degradation does not affect the growth kinetics and morphology of ALD-SnO films. But it notably deteriorates their electronic properties, resulting in films with twice the electrical resistance due to different oxidation mechanisms of the degradation products. Perovskite solar cells employing such films exhibit a significant loss in power conversion efficiency, primarily due to charge transport and transfer losses. These findings urge strategies to stabilize TDMASn, a critical precursor for ALD-SnO films, or to identify alternative materials to achieve efficient and reliable devices.
通过原子层沉积（ALD）合成的氧化锡（SnO）薄膜在包括电化学传感器、晶体管和光伏器件在内的一系列光电器件中得到了广泛研究。然而，关键的ALD-SnO前驱体，即四（二甲基氨基）锡（IV）（TDMASn）的完整性及其对最终薄膜性能的影响仍未得到探索。本文报道了TDMASn通过Sn-亚胺络合物显著降解为双（二甲基氨基）锡（II），并研究了其对相应薄膜和器件的影响。令人惊讶的是，发现这种降解并不影响ALD-SnO薄膜的生长动力学和形态。但它显著恶化了它们的电子性能，由于降解产物的不同氧化机制，导致薄膜的电阻增加了一倍。采用这种薄膜的钙钛矿太阳能电池在功率转换效率方面表现出显著损失，主要是由于电荷传输和转移损失。这些发现促使人们采取策略来稳定TDMASn（ALD-SnO薄膜的关键前驱体），或寻找替代材料以实现高效可靠的器件。
