Liu Guixian, Wang Yufan, Xu Zhoujuan, Zeng Zhouxiaosong, Huang Lanyu, Ge Cuihuan, Wang Xiao
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
Beilstein J Nanotechnol. 2024 Nov 6;15:1362-1368. doi: 10.3762/bjnano.15.109. eCollection 2024.
Constructing van der Waals materials with spontaneous out-of-plane polarization through interlayer engineering expands the family of two-dimensional ferroelectrics and provides an excellent platform for enhancing the photoelectric conversion efficiency. Here, we reveal the effect of spontaneous polarization on ultrafast carrier dynamics in rhombohedral stacked bilayer WSe. Using precise stacking techniques, a 3R WSe-based vertical heterojunction was successfully constructed and confirmed by polarization-resolved second harmonic generation measurements. Through output characteristics and the scanning photocurrent map under zero bias, we reveal a non-zero short-circuit current in the graphene/3R WSe/graphene heterojunction region, demonstrating the bulk photovoltaic effect. Furthermore, the out-of-plane polarization enables the 3R WSe heterojunction region to achieve an ultrafast intrinsic photoresponse time of approximately 3 ps. The ultrafast response time remains consistent across varying detection powers, demonstrating environmental stability and highlighting the potential in optoelectronic applications. Our study presents an effective strategy for enhancing the response time of photodetectors.
通过层间工程构建具有自发面外极化的范德华材料,扩展了二维铁电体家族,并为提高光电转换效率提供了一个优异的平台。在此,我们揭示了自发极化对菱面体堆叠双层WSe中超快载流子动力学的影响。利用精确的堆叠技术,成功构建了基于3R WSe的垂直异质结,并通过偏振分辨二次谐波产生测量得到证实。通过零偏压下的输出特性和扫描光电流图,我们揭示了石墨烯/3R WSe/石墨烯异质结区域中存在非零短路电流,证明了体光伏效应。此外,面外极化使3R WSe异质结区域能够实现约3 ps的超快本征光响应时间。在不同的检测功率下,超快响应时间保持一致,证明了环境稳定性,并突出了其在光电子应用中的潜力。我们的研究提出了一种提高光电探测器响应时间的有效策略。