Liu Yongxian, Tang Bo, Wang Zaixing, Jiao Yayao, Hou Qingqing, Dang Zhangting, Hua Xiufu, Wei Liping, Wang Lingling, Wei Renbo
School of Chemical Engineering, Northwest University, Xi'an 710069, China.
School of Materials Science & Engineering, Chongqing University of Technology, Chongqing 401320, China.
J Colloid Interface Sci. 2025 Feb 15;680(Pt B):85-95. doi: 10.1016/j.jcis.2024.11.088. Epub 2024 Nov 14.
High performance film capacitor has attracted widespread attention due to their increasing applications in electronic devices. However, the insufficient dielectric properties of dielectrics in capacitors severely restrict their practical application. In this work, the dielectric performances of polyarylene ether nitrile (PEN) are effectively enhanced by the synthesizing and employing of carboxylated PEN (CPEN) modified one-dimensional (1D) strontium barium titanate nanorod (BSTNR) (CPEN@BSTNR), as well as applying of hot stretching technique. CPEN@BSTNR is prepared via the synthesizing of BSTNR, modifying with γ-Aminopropyl triethoxysilane (KH550), and grafting by CPEN. Deriving from the 1D structure of BSTNR and the peripheral modification by CPEN, compatibility of CPEN@BSTNR in PEN has been significantly improved. Moreover, CPEN@BSTNR orients in the polymer matrix attributing to the hot stretching. Consequently, the hot stretched 16 wt% CPEN@BSTNR/PEN film exhibits an increased dielectric constant of 17.30 and maintained a breakdown strength of 204.1 kV/mm. As a result, this stretched composite film demonstrates an energy density up to 3.19 J/cm, with a 300 % improvement over pure PEN. This enhanced dielectric properties of PEN presents a promising avenue for the fabrication of high performance film capacitors.
高性能薄膜电容器因其在电子设备中的应用日益广泛而备受关注。然而,电容器中电介质的介电性能不足严重限制了它们的实际应用。在这项工作中,通过合成和使用羧化聚芳醚腈(CPEN)改性的一维(1D)钛酸锶钡纳米棒(BSTNR)(CPEN@BSTNR)以及应用热拉伸技术,有效地提高了聚芳醚腈(PEN)的介电性能。CPEN@BSTNR是通过合成BSTNR、用γ-氨丙基三乙氧基硅烷(KH550)改性以及用CPEN接枝制备的。由于BSTNR的一维结构和CPEN的外围改性,CPEN@BSTNR在PEN中的相容性得到了显著改善。此外,由于热拉伸,CPEN@BSTNR在聚合物基体中取向。因此,热拉伸的16 wt% CPEN@BSTNR/PEN薄膜的介电常数增加到17.30,击穿强度保持在204.1 kV/mm。结果,这种拉伸复合薄膜的能量密度高达3.19 J/cm³,比纯PEN提高了300%。PEN这种增强的介电性能为制造高性能薄膜电容器提供了一条有前途的途径。