Ghani Maheera Abdul, Sarkar Soumya, Li Yang, Wang Ye, Watanabe Kenji, Taniguchi Takashi, Wang Yan, Chhowalla Manish
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS UK.
Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan.
MRS Energy Sustain. 2024;11(2):616-623. doi: 10.1557/s43581-024-00109-y. Epub 2024 Aug 21.
Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInPS (CIPS) has been integrated with graphene and other 2D materials to realize potentially novel low energy electronic devices. However, the influence of 2D CIPS on the properties of graphene and doping across the vdW interface has not been studied in detail. Here, we study graphene field effect transistors (FETs) with CIPS as the top gate. We find that CIPS leads to modulation of the graphene Fermi level due to local doping. We also find polarization-induced hysteresis in CIPS-gated graphene FETs. Electrical transport measurements from 50 to300 K show that above 200 K, the ferroelectric response decreases. As a result, the hysteresis voltage windows in the graphene ferroelectric FETs (FeFET) transfer curves decrease above 200 K. Our results show that interfacial remote doping affects the macroscopic polarization and performance of CIPS-based graphene FeFETs.
This research studies the temperature-dependent local doping across a vdW ferroelectric/2D channel interface that affects the transport properties of ferroelectric field effect transistors (FeFETs).Experimental findings showed ferroelectric polarization switching-based hysteresis in CuInPS-gated graphene FeFETs.
vdW ferroelectrics that can be scaled to atomic layer thicknesses are useful for miniaturised low energy electronics.Understanding the interface charge or energy transfer in vdW ferroelectrics is essential for their integration into current or future technologies.
The online version contains supplementary material available at 10.1557/s43581-024-00109-y.
二维（2D）材料的异质结构包含纯净的范德华（vdW）界面，可促进电荷或能量转移。最近，二维铁电体CuInPS（CIPS）已与石墨烯和其他二维材料集成，以实现潜在的新型低能耗电子器件。然而，二维CIPS对石墨烯性质以及跨vdW界面的掺杂影响尚未得到详细研究。在此，我们研究了以CIPS作为顶栅的石墨烯场效应晶体管（FET）。我们发现，由于局部掺杂，CIPS导致石墨烯费米能级发生调制。我们还在CIPS栅控石墨烯FET中发现了极化诱导的滞后现象。在50至300 K的电输运测量表明，在200 K以上，铁电响应减弱。因此，石墨烯铁电场效应晶体管（FeFET）转移曲线中的滞后电压窗口在200 K以上减小。我们的结果表明，界面远程掺杂会影响基于CIPS的石墨烯FeFET的宏观极化和性能。
本研究考察了跨vdW铁电体/二维沟道界面的温度依赖型局部掺杂，该掺杂会影响铁电场效应晶体管（FeFET）的输运性质。实验结果表明，在CuInPS栅控石墨烯FeFET中存在基于铁电极化切换的滞后现象。
可缩放到原子层厚度的vdW铁电体对小型化低能耗电子器件很有用。了解vdW铁电体中的界面电荷或能量转移对于将其集成到当前或未来技术中至关重要。
网络版包含可在10.1557/s43581-024-00109-y获取的补充材料。
