Iida Kazumasa, Yamauchi Yoshihiro, Hatano Takafumi, Walter Kai, Holzapfel Bernhard, Hänisch Jens, Guo Zimeng, Gao Hongye, Shi Haoshan, Tokuta Shinnosuke, Hata Satoshi, Yamamoto Akiyasu, Ikuta Hiroshi
College of Industrial Technology, Nihon University, Narashino, Chiba, Japan.
JST CREST, Kawaguchi, Saitama, Japan.
Sci Technol Adv Mater. 2024 Aug 8;25(1):2384829. doi: 10.1080/14686996.2024.2384829. eCollection 2024.
Understanding the nature of grain boundaries is a prerequisite for fabricating high-performance superconducting bulks and wires. For iron-based superconductors [e.g. Ba(Fe,Co) As , Fe(Se,Te), and NdFeAs(O,F)], the dependence of the critical current density on misorientation angle ( ) has been explored on [001]-tilt grain boundaries, but no data for other types of orientations have been reported. Here, we report on the structural and transport properties of Fe(Se,Te) grown on CeO -buffered symmetric [010]-tilt roof-type SrTiO bicrystal substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscopy revealed that of Fe(Se,Te) was smaller whereas of CeO was larger than that of the substrate. The difference in between the CeO buffer layer and the substrate is getting larger with increasing . For of the substrates, of Fe(Se,Te) was zero, whereas of CeO was continuously increasing. The inclined growth of CeO can be explained by the geometrical coherency model. The -axis growth of Fe(Se,Te) for of the substrates is due to the domain matching epitaxy on (221) planes of CeO . Electrical transport measurements confirmed no reduction of inter-grain for , indicative of strong coupling between the grains.
了解晶界的性质是制造高性能超导块材和线材的前提条件。对于铁基超导体[例如Ba(Fe,Co)As 、Fe(Se,Te)和NdFeAs(O,F)],已经研究了[001]倾斜晶界上临界电流密度对取向差角( )的依赖性,但尚未报道其他取向类型的数据。在此,我们报告了通过脉冲激光沉积在CeO 缓冲的对称[010]倾斜屋顶型SrTiO 双晶衬底上生长的Fe(Se,Te)的结构和输运性质。X射线衍射和透射电子显微镜表明,Fe(Se,Te)的 小于而CeO 的 大于衬底的 。随着 的增加,CeO 缓冲层和衬底之间的 差异越来越大。对于衬底的 ,Fe(Se,Te)的 为零,而CeO 的 持续增加。CeO 的倾斜生长可以用几何相干模型来解释。对于衬底的 ,Fe(Se,Te)沿 轴生长是由于在CeO 的(221)平面上的畴匹配外延。电输运测量证实,对于 ,晶粒间 没有降低,这表明晶粒之间存在强耦合。