Cao Fa, Hu Zijun, Yan Tingting, Hong Enliu, Deng Xiaolei, Wu Limin, Fang Xiaosheng
Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China.
College of Chemistry and Chemical Engineering Inner Mongolia University Hohhot, Hohhot, 010021, P. R. China.
Adv Mater. 2023 Nov;35(44):e2304550. doi: 10.1002/adma.202304550. Epub 2023 Sep 21.
The imitation of human visual memory demands the multifunctional integration of light sensors similar to the eyes, and image memory, similar to the brain. Although humans have already implemented electronic devices with visual memory functions, these devices require a combination of various components and logical circuits. However, the combination of visual perception and high-performance information storage capabilities into a single device to achieve visual memory remains challenging. In this study, inspired by the function of human visual memory, a dual-functional perovskite-based photodetector (PD) and memristor are designed to realize visual perception and memory capacities. As a PD, it realizes an ultrahigh self-powered responsivity of 276 mA W , a high detectivity of 4.7 × 10 Jones (530 nm; light intensities, 2.34 mW cm ), and a high rectification ratio of ≈100 (±2 V). As a memristor, an ultrahigh on/off ratio (≈10 ), an ultralow power consumption of 3 × 10 W, a low setting voltage (0.15 V), and a long retention time (>7000 s) are realized. Moreover, the dual-functional device has the capacity to perceive and remember light paths and store data with good cyclic stability. This device exhibits perceptual and cyclic erasable memory functions, which provides new opportunities for mimicking human visual memory in future multifunctional applications.
对人类视觉记忆的模仿需要类似于眼睛的光传感器以及类似于大脑的图像记忆的多功能集成。尽管人类已经实现了具有视觉记忆功能的电子设备，但这些设备需要各种组件和逻辑电路的组合。然而，将视觉感知和高性能信息存储能力集成到单个设备中以实现视觉记忆仍然具有挑战性。在本研究中，受人类视觉记忆功能的启发，设计了一种基于钙钛矿的双功能光电探测器（PD）和忆阻器，以实现视觉感知和记忆能力。作为一个PD，它实现了276 mA/W的超高自供电响应度、4.7×10 Jones（530 nm；光强，2.34 mW/cm）的高探测率以及≈100（±2 V）的高整流比。作为一个忆阻器，实现了超高的开/关比（≈10）、3×10 W的超低功耗、0.15 V的低设置电压以及>7000 s的长保持时间。此外，该双功能设备能够感知和记忆光路，并以良好的循环稳定性存储数据。该设备展现出感知和循环可擦除记忆功能，这为未来多功能应用中模仿人类视觉记忆提供了新的机会。
