Wang Yifan, Pan Ziyu, Yan Yongxian, Yang Yatao, Zhao Wenhua, Ding Ning, Tang Xingyu, Wu Pengzhuo, Zhao Qiancheng, Li Yi
School of Microelectronics, Southern University of Science and Technology, Shenzhen, China.
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
Nanophotonics. 2024 Jul 12;13(18):3207-3252. doi: 10.1515/nanoph-2024-0172. eCollection 2024 Aug.
Gallium phosphide (GaP) has been increasingly prioritized, fueled by the enormous demands in visible light applications such as biomedical and quantum technologies. GaP has garnered tremendous attention in nanophotonics thanks to its high refractive index, indirect bandgap width of 2.26 eV, lattice perfectly matched with silicon, and omnipotent and competitive nonlinear optical properties. Herein, we review the progress and application of GaP in nanoscale devices over the past two decades. The material properties of bulk GaP are first listed, followed by a summary of the methodologies for fabricating nanoscale devices and related integration techniques. Then, we digest the operational mechanisms across different GaP-based devices on their optical linear responses. Following this, we categorize the GaP nonlinear optical effects into multiple aspects including second-harmonic generation, four-wave mixing, Kerr optical frequency combs, etc. Ultimately, we present a perspective on GaP nanophotonics in the context of coexisting and competing modes of various nonlinear effects. We believe that a comprehensive overview of unique GaP will propel these nanophotonic devices toward a mature state, underpinning foundational understanding and leveraging practical innovations.
由于生物医学和量子技术等可见光应用的巨大需求,磷化镓(GaP)的优先级日益提高。由于其高折射率、2.26 eV的间接带隙宽度、与硅完美匹配的晶格以及全能且具有竞争力的非线性光学特性,GaP在纳米光子学领域引起了极大关注。在此,我们回顾了过去二十年来GaP在纳米级器件中的进展和应用。首先列出了块状GaP的材料特性,接着总结了制造纳米级器件的方法和相关集成技术。然后,我们剖析了基于不同GaP的器件在光学线性响应方面的运行机制。在此之后,我们将GaP的非线性光学效应分为多个方面,包括二次谐波产生、四波混频、克尔光学频率梳等。最后,我们在各种非线性效应共存和竞争模式的背景下,对GaP纳米光子学提出了展望。我们相信,对独特的GaP进行全面概述将推动这些纳米光子器件走向成熟,为基础理解提供支撑并促进实际创新。