微型发光二极管显示器的光明未来。

A bright future for micro-LED displays.

作者信息

Bandari Vineeth K, Schmidt Oliver G

机构信息

Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, Germany.

Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, Germany.

出版信息

Light Sci Appl. 2024 Dec 6;13(1):317. doi: 10.1038/s41377-024-01683-z.

DOI:10.1038/s41377-024-01683-z

PMID:39639008

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11621698/

Abstract

The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10 nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics.

摘要

基于氮化镓的微发光二极管阵列实现了超过10尼特的亮度以及高达1080×780像素的高密度微显示器，这标志着该领域的一项真正突破。这一突破是攻克一系列长期挑战的成果，这些挑战包括晶圆级高质量外延生长、侧壁钝化、高效光子提取以及精细键合技术，并且有望为增强现实和虚拟现实设备、可穿戴设备以及下一代消费电子产品带来显著优势。