Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology.

Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches. Consequently, research is increasingly focused on scalable InGaN nanowire µLEDs representing a transformative advancement in display technology, particularly for next-generation applications such as virtual/augmented reality and high-speed optical interconnects. This study presents recent progress and critical challenges in the development of InGaN nanowire µLEDs, highlighting their performance and potential as the next-generation displays in consumer electronics.