Veeramuthu Vignesh, Kim Sung-Un, Lee Sang-Wook, Navamathavan R, Chandran Bagavath, Um Dae-Young, Oh Jeong-Kyun, Lee Min-Seok, Kim Yong-Ho, Lee Cheul-Ro, Ra Yong-Ho
Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, South Korea.
Division of Physics, School of Advanced Sciences, VIT University Chennai Campus, Chennai 600127, India.
Natl Sci Rev. 2024 Sep 20;12(1):nwae306. doi: 10.1093/nsr/nwae306. eCollection 2025 Jan.
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches. Consequently, research is increasingly focused on scalable InGaN nanowire µLEDs representing a transformative advancement in display technology, particularly for next-generation applications such as virtual/augmented reality and high-speed optical interconnects. This study presents recent progress and critical challenges in the development of InGaN nanowire µLEDs, highlighting their performance and potential as the next-generation displays in consumer electronics.
对具有小尺寸片上发光二极管的高效光电器件的需求不断增加，推动了它们在自发光显示器中的应用扩展，从微电子显示器到大型视频墙。氮化铟镓纳米线具有高电子迁移率、可调发射波长、高电流密度下的耐久性、紧凑尺寸、自发光、长寿命、低功耗、快速响应和令人印象深刻的亮度等特性，正成为微发光二极管（µLED）的选择。然而，由于在具有不同晶体结构和高晶格失配的衬底上进行成分调整和带隙问题，在实现高质量晶体和晶格匹配异质结构方面仍然存在挑战。因此，研究越来越集中在可扩展的氮化铟镓纳米线µLED上，这代表了显示技术的变革性进展，特别是对于虚拟/增强现实和高速光互连等下一代应用。本研究展示了氮化铟镓纳米线µLED开发的最新进展和关键挑战，突出了它们作为消费电子产品下一代显示器的性能和潜力。
