Liu Yongkai, Wang Tianyu, Song Yifan, Xu Kangli, Yuan Ruihong, Li Zhenhai, Yu Jiajie, Meng Jialin, Zhu Hao, Sun Qingqing, Zhang David Wei, Chen Lin
School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China.
School of Integrated Circuits, Shandong University, Jinan 250100, China.
Nano Lett. 2025 Jan 8;25(1):157-165. doi: 10.1021/acs.nanolett.4c04654. Epub 2024 Dec 7.
By design of the element concentration, regulating the ratio of the t phase and the energy difference between t and o phases, the ZrHfOx (ZHO) film demonstrated the highest polarization value at a maximum processing temperature of only 280 °C without an annealing process, and it can withstand over 10 polarization cycles without breakdown. The ZHO film maintains good ferroelectric performance in extreme temperature environments (4.55 to 473 K). Even under high-temperature conditions, the ZHO film shows exceptional endurance performance (>10 at 423 K). These parameters represent the best overall performance reported in the literature to date. The polarization switching process can be accurately described by the nucleation limited switching (NLS) model, and the polarization switching time is expected to reach the sub-ns level as the device size decreases. The ZHO film demonstrates great potential in both process simplification and performance optimization, providing new possibilities for the application of ferroelectric devices.
通过设计元素浓度、调节t相的比例以及t相和o相之间的能量差,ZrHfOx(ZHO)薄膜在仅280°C的最高处理温度下且无需退火过程的情况下展现出最高的极化值,并且能够承受超过10次极化循环而不击穿。ZHO薄膜在极端温度环境(4.55至473 K)下保持良好的铁电性能。即使在高温条件下,ZHO薄膜也表现出卓越的耐久性(在423 K时大于10次)。这些参数代表了迄今为止文献中报道的最佳综合性能。极化切换过程可以通过成核限制切换(NLS)模型准确描述,并且随着器件尺寸减小,极化切换时间有望达到亚纳秒级。ZHO薄膜在工艺简化和性能优化方面都展现出巨大潜力,为铁电器件的应用提供了新的可能性。