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用于增强光学和热电性能的激光诱导纳米结构硅和硅锗层

Laser-Induced Nanostructured Si and SiGe Layers for Enhanced Optical and Thermoelectric Performance.

作者信息

El-Rifai Joumana, Bsaibess Eliane, Christopoulos Stavros, Giovannelli Fabien, Slimani Ahmed, Laux-Le Guyon Valerie

机构信息

Department of Sciences and Engineering, Sorbonne University Abu Dhabi, Abu Dhabi 38044, United Arab Emirates.

SUAD Research Institute, Sorbonne University Abu Dhabi, Abu Dhabi 38044, United Arab Emirates.

出版信息

ACS Omega. 2024 Nov 20;9(48):47506-47518. doi: 10.1021/acsomega.4c06006. eCollection 2024 Dec 3.

DOI:10.1021/acsomega.4c06006
PMID:39651110
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11618418/
Abstract

We investigate a method for fabricating layers that exhibit both high optical absorption and promising thermoelectric properties. Using plasma-enhanced chemical vapor deposition (PECVD), amorphous Si and SiGe layers are deposited on glass substrates and subsequently processed via laser annealing to achieve nanostructured layers. Our results show that a single laser annealing pulse at 40 mJ yields the highest power factor, approximately 90 μW/m·K. Additionally, we observe a maximum absorbance enhancement factor of 60 times in the spectral region near 880 nm for samples treated with a single pulse of 60 mJ compared to untreated samples. The effects of laser energy, the number of pulses, and material choice are further discussed.

摘要

我们研究了一种制造兼具高光吸收和良好热电性能的层的方法。使用等离子体增强化学气相沉积（PECVD），在玻璃基板上沉积非晶硅和硅锗层，随后通过激光退火进行处理以获得纳米结构层。我们的结果表明，40 mJ的单个激光退火脉冲产生最高的功率因数，约为90 μW/m·K。此外，与未处理的样品相比，对于用60 mJ的单个脉冲处理的样品，我们在880 nm附近的光谱区域观察到最大吸光度增强因子为60倍。进一步讨论了激光能量、脉冲数和材料选择的影响。

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