Peng Baokang, Jiao Yanxin, Zhong Haotian, Rong Zhao, Wang Zirui, Xiao Ying, Wong Waisum, Zhang Lining, Wang Runsheng, Huang Ru
School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
School of Integrated Circuits, Peking University, Beijing 100871, China.
Fundam Res. 2023 Feb 14;4(5):1306-1313. doi: 10.1016/j.fmre.2022.09.035. eCollection 2024 Sep.
In this work, a surface-potential based compact model focusing on the quantum confinement effects of ultimately scaled gate-all-around (GAA) MOSFET is presented. Energy quantization with sub-band formation along the radius direction of cylindrical GAAs or thickness direction of nanosheet GAAs leads to significant quantization effects. An analytical model of surface potentials is developed by solving the Poisson equation with incorporating sub-band effects. In combination with the existing transport model framework, charge-voltage and current-voltage formulations are developed based on the surface potential. The model formulations are then extensively validated using TCAD numerical simulations as well as Si data of nanosheet GAA MOSFETs. Simulations of typical circuits verify the model robustness and convergence for its applications in GAA technology.
在这项工作中，提出了一种基于表面势的紧凑模型，该模型聚焦于极缩围栅（GAA）金属氧化物半导体场效应晶体管（MOSFET）的量子限制效应。沿圆柱形GAA的半径方向或纳米片GAA的厚度方向形成子带的能量量子化会导致显著的量子化效应。通过求解包含子带效应的泊松方程，建立了表面势的解析模型。结合现有的输运模型框架，基于表面势开发了电荷 - 电压和电流 - 电压公式。然后使用TCAD数值模拟以及纳米片GAA MOSFET的硅数据对模型公式进行了广泛验证。典型电路的模拟验证了该模型在GAA技术应用中的稳健性和收敛性。
