Suman Shradha, Sharma Dhananjay Kumar, Szabo Ondrej, Rakesh Benadict, Marton Marian, Vojs Marian, Sankaran Kamatchi Jothiramalingam, Kromka Alexander
CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, 751013, India.
Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India.
Small. 2025 Jan;21(3):e2407514. doi: 10.1002/smll.202407514. Epub 2024 Dec 15.
The miniaturization of electrochemical supercapacitors (EC-SCs) requires electrode materials that are both durable and efficient. Boron-doped diamond (BDD) films are an ideal choice for EC-SC due to their durability and exceptional electrochemical performance. In this study, nanostructured boron-doped ultra-nanocrystalline diamonds (NBUNCD) are fabricated on Si micro-pyramids (Si) using a simple reactive ion etching (RIE) process. During the etching process, the high aspect ratio and the induction of sp graphite in these nanorod electrodes achieved a maximum specific capacitance of 53.7 mF cm at a current density of 2.54 mA cm, with a 95.5% retention after 5000 cycles. Additionally, the energy density reached 54.06 µW h cm at a power density of 0.25 µW cm. A symmetric pouch cell using NBUNCD/Si exhibited a specific capacitance of 0.23 mF cm at 20 µA cm, an energy density of 31.98 µW h cm, and a power density of 0.91 µW cm. These superior EC properties highlight NBUNCD/Si's potential for advancing miniaturized supercapacitors with high capacitance retention, cycle stability, and energy density.
电化学超级电容器(EC-SCs)的小型化需要兼具耐用性和高效性的电极材料。硼掺杂金刚石(BDD)薄膜因其耐用性和卓越的电化学性能,是EC-SC的理想选择。在本研究中,采用简单的反应离子蚀刻(RIE)工艺在硅微金字塔(Si)上制备了纳米结构的硼掺杂超纳米晶金刚石(NBUNCD)。在蚀刻过程中,这些纳米棒电极的高纵横比以及诱导生成的sp石墨在2.54 mA cm的电流密度下实现了53.7 mF cm的最大比电容,在5000次循环后电容保持率为95.5%。此外,在0.25 µW cm的功率密度下能量密度达到54.06 µW h cm。使用NBUNCD/Si的对称软包电池在20 µA cm下比电容为0.23 mF cm,能量密度为31.98 µW h cm,功率密度为0.91 µW cm。这些优异的电化学性能突出了NBUNCD/Si在推进具有高电容保持率、循环稳定性和能量密度的小型化超级电容器方面的潜力。