Xie Hang, Mu Zhiqiang, Si Yuxin, Wang Jiaqi, Wang Xiangrong, Wu Yihong
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
Adv Mater. 2025 Feb;37(5):e2408340. doi: 10.1002/adma.202408340. Epub 2024 Dec 15.
The ability to electrically manipulate spin states in magnetic materials is essential for the advancement of energy-efficient spintronic device, which is typically achieved in systems composed of a spin source and a magnetic target, where the magnetic state of the target is altered by a charge current. While theories suggest that ferromagnets could function as more versatile spin sources, direct experimental studies involving only the spin source and target layers have been lacking. Here electrical manipulation of spin states in noncolinear antiferromagnet MnSn using ferromagnets (Ni, Fe, NiFe, CoFeB) as the spin sources is reported. Both field-free switching and switching with an assistive field are achieved in MnSn/ferromagnet bilayers, where the switching polarity correlates with the sign of anomalous Hall effect of the ferromagnets. The experimental findings can be accounted for by the presence of spin currents arising from spin-dependent scattering within the ferromagnets. This finding provides valuable insights into the underlying mechanisms of spin-conversion in ferromagnets, offering an alternative spin source for novel technological applications.
在磁性材料中对自旋态进行电操控的能力对于节能自旋电子器件的发展至关重要,这通常在由自旋源和磁性靶材组成的系统中实现,其中靶材的磁态由电荷电流改变。虽然理论表明铁磁体可以作为更通用的自旋源,但缺乏仅涉及自旋源和靶材层的直接实验研究。在此报道了使用铁磁体(镍、铁、镍铁、钴铁硼)作为自旋源对非共线反铁磁体MnSn中的自旋态进行电操控。在MnSn/铁磁体双层结构中实现了无场切换和辅助场切换,其中切换极性与铁磁体反常霍尔效应的符号相关。实验结果可以通过铁磁体内自旋相关散射产生的自旋电流来解释。这一发现为铁磁体中自旋转换的潜在机制提供了有价值的见解,为新型技术应用提供了一种替代自旋源。