Ren Li, Tan Qiuhong, Gao Kunpeng, Yang Peizhi, Wang Qianjin, Liu Yingkai
College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming 650500, China.
Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming 650500, China.
Nanophotonics. 2023 Feb 28;12(7):1347-1357. doi: 10.1515/nanoph-2023-0106. eCollection 2023 Apr.
All-inorganic perovskite CsPbBr is considered as a promising photoelectric material due to its high environmental stability and excellent photoelectric properties. Constructing low-dimension hybrid structures by combining CsPbBr with semiconductor materials have recently attracted particular attention because they may bring new functionalities or generate synergistic effects in optoelectronic devices. Herein, the high-quality 1D CdSe nanobelt (NB)/CsPbBr microwire (MW) photodetectors are designed first time, which exhibit excellent performance as integrating / ratio of 5.02 × 10, responsivity of 1.63 × 10 A/W, external quantum efficiency of 3.8 × 10% and detectivity up to 5.33 × 10 Jones. These properties are all improved at least one order of magnitude compared to those of single CsPbBr photodetectors. Moreover, the response range is broadened from the 300-570 nm (the single CsPbBr device) to 300-740 nm (the hybrid photodetector). Then, the first-principles calculations are carried out to reveal the physical mechanism from the atomic scale. The remarkably improved optoelectronic properties are attributed to the high crystalline quality as well as unique band alignment of hybrid structure that facilitate the effective separation and transport of photogenerated carriers. These works indicate that 1D CdSe/CsPbBr hybrid devices have promising applications in building high-performance and broader spectral response photodetectors and other optoelectronic devices.
全无机钙钛矿CsPbBr因其高环境稳定性和优异的光电性能而被认为是一种很有前景的光电材料。通过将CsPbBr与半导体材料结合构建低维混合结构最近引起了特别关注,因为它们可能在光电器件中带来新功能或产生协同效应。在此,首次设计了高质量的一维CdSe纳米带(NB)/CsPbBr微线(MW)光电探测器,其表现出优异的性能,积分比为5.02×10,响应度为1.63×10 A/W,外量子效率为3.8×10%,探测率高达5.33×10琼斯。与单一CsPbBr光电探测器相比,这些性能均至少提高了一个数量级。此外,响应范围从300 - 570nm(单一CsPbBr器件)拓宽到300 - 740nm(混合光电探测器)。然后,进行第一性原理计算以从原子尺度揭示物理机制。光电性能的显著改善归因于混合结构的高结晶质量以及独特的能带排列,这有利于光生载流子的有效分离和传输。这些工作表明一维CdSe/CsPbBr混合器件在构建高性能和更宽光谱响应的光电探测器及其他光电器件方面具有广阔的应用前景。