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氧化铝基质中核/壳锗/锰量子点的三维晶格:结构、制备及光电性能

3D Lattices of Core/Shell Ge/Mn Quantum Dots in an Alumina Matrix: Structure, Fabrication, and Photo-Electrical Properties.

作者信息

Periša Ivana, Svalina Gabrijela, Ivanda Mile, Tkalčević Marija, Bernstorff Sigrid, Mičetić Maja

机构信息

Ruđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, Croatia.

Dipartimento di Ingegneria Industriale, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano, Italy.

出版信息

Nanomaterials (Basel). 2024 Nov 27;14(23):1906. doi: 10.3390/nano14231906.

Abstract

Materials consisting of quantum dots with a semiconductor-core, metal-shell structure often have exciting and tunable photo-electrical properties in a large range of values, and they are adjustable by core and shell structure parameters. Here, we investigated the influence of Mn-shell addition to Ge quantum dots formed in an alumina matrix by magnetron sputtering deposition. We show a well-achieved formation of the 3D regular lattices of Ge-core, Mn-rich shell quantum dots, which were achieved by self-assembled growth mode. Intermixing of Ge and Mn in the shell was observed. The optical, electrical, and photo-conversion properties were strongly affected by the addition of the Mn shell and its thickness. The shell induced changes in the optical gap of the materials and caused an increase in the material's conductivity. The most significant changes occurred in the photo-electrical properties of the materials. Their quantum efficiency, i.e., the efficiency of the conversion of photon energy to the electrical current, was very strongly enhanced by the shell addition, though it depended on its thickness. The best results were obtained for the thinnest shell added to the Ge core, for which the maximal quantum efficiency was significantly enhanced by more than 100%. The effect was, evidently, the consequence of multiple exciton generation, which was enhanced by the shell addition. The obtained materials offer great potential for various applications in photo-sensitive devices.

摘要

由具有半导体核、金属壳结构的量子点组成的材料通常在很大的数值范围内具有令人兴奋且可调谐的光电特性,并且它们可通过核和壳结构参数进行调节。在此,我们研究了通过磁控溅射沉积在氧化铝基质中形成的锗量子点添加锰壳的影响。我们展示了通过自组装生长模式成功实现了锗核、富锰壳量子点的三维规则晶格的形成。观察到壳层中锗和锰的混合。添加锰壳及其厚度对光学、电学和光转换特性产生了强烈影响。壳层引起了材料光学带隙的变化,并导致材料电导率增加。最显著的变化发生在材料的光电特性上。它们的量子效率,即光子能量转换为电流的效率,通过添加壳层得到了极大增强,不过这取决于壳层的厚度。对于添加到锗核上的最薄壳层,获得了最佳结果,其最大量子效率显著提高了超过100%。显然,这种效应是多激子产生的结果,添加壳层增强了多激子产生。所获得的材料在光敏器件的各种应用中具有巨大潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4b43/11643595/faafc66287ad/nanomaterials-14-01906-g001.jpg

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