Song Shun, Qin Lu, Wang Zhi, Lyu Juan, Gong Jian, Yang Shenyuan
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
School of Physics and Technology, Inner Mongolia University, Hohhot 010021, China.
Nanomaterials (Basel). 2024 Dec 6;14(23):1960. doi: 10.3390/nano14231960.
We systematically study the transport properties of arsenene nanoribbon tunneling field-effect transistors (TFETs) along the armchair directions using first-principles calculations based on density functional theory combined with the non-equilibrium Green's function approach. The pristine nanoribbon TFET devices with and without underlap (UL) exhibit poor performance. Introducing a H defect in the left UL region between the source and channel can drastically enhance the ON-state currents and reduce the SS to below 60 mV/decade. When the H defect is positioned far from the gate and/or at the center sites, the ON-state currents are substantially enhanced, meeting the International Technology Roadmap for Semiconductors requirements for high-performance and low-power devices with 5 nm channel length. The gate-all-around (GAA) structure can further improve the performance of the devices with H defects. Particularly for the devices with H defects near the edge, the GAA structure significantly reduces the SS values as low as 35 mV/decade. Our study demonstrates that GAA structure can greatly enhance the performance of the arsenene nanoribbon TFET devices with H defects, providing theoretical guidance for improving TFET performance based on two-dimensional material nanoribbons through the combination of defect engineering and GAA gate structures.
我们基于密度泛函理论并结合非平衡格林函数方法，利用第一性原理计算系统地研究了沿扶手椅方向的砷烯纳米带隧穿场效应晶体管（TFET）的输运特性。具有和不具有重叠（UL）的原始纳米带TFET器件表现出较差的性能。在源极和沟道之间的左侧UL区域引入一个H缺陷可以显著提高导通态电流，并将亚阈摆幅降低到60 mV/十倍频以下。当H缺陷远离栅极和/或位于中心位置时，导通态电流会大幅增强，满足国际半导体技术路线图对沟道长度为5 nm的高性能和低功耗器件的要求。全栅（GAA）结构可以进一步提高具有H缺陷的器件的性能。特别是对于边缘附近有H缺陷的器件，GAA结构可将亚阈摆幅值显著降低至低至35 mV/十倍频。我们的研究表明，GAA结构可以极大地提高具有H缺陷的砷烯纳米带TFET器件的性能，为通过缺陷工程和GAA栅极结构相结合来提高基于二维材料纳米带的TFET性能提供了理论指导。
