Zhou Ziyang, Yang Weiye, Peng Hongyan, Zhao Shihua
College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
The Innovation Platform for Academicians of Hainan Province, Haikou 571158, China.
Sensors (Basel). 2024 Dec 4;24(23):7751. doi: 10.3390/s24237751.
This study explores the fabrication of ZnO-SiO composite films on silicon substrates via a sol-gel method combined with spin-coating, followed by annealing at various temperatures. The research aims to enhance the UV emission and photoelectric properties of the films. XRD showed that the prepared ZnO sample has a hexagonal structure. SEM images revealed the formation of ZnO nanorods within a dense SiO substrate, ranging from 10 μm to 30 μm in length. Photoluminescent analysis showed that the film exhibited strong UV emission centered at 360 nm. The response time measurements indicated that the optimal photoresponse time was approximately 2.9 s. These results suggest the potential of ZnO-SiO films as efficient UV-emitting materials with high photoconductivity and a stably reproducible response under visible light, thereby laying the foundation for their application in advanced optoelectronic devices.
本研究探索了通过溶胶-凝胶法结合旋涂在硅衬底上制备ZnO-SiO复合薄膜，随后在不同温度下进行退火处理。该研究旨在提高薄膜的紫外发射和光电性能。X射线衍射表明，制备的ZnO样品具有六方结构。扫描电子显微镜图像显示，在致密的SiO衬底内形成了长度为10μm至30μm的ZnO纳米棒。光致发光分析表明，该薄膜在360nm处呈现出强烈的紫外发射。响应时间测量表明，最佳光响应时间约为2.9秒。这些结果表明，ZnO-SiO薄膜具有作为高效紫外发光材料的潜力，具有高光导率以及在可见光下稳定可重复的响应，从而为其在先进光电器件中的应用奠定了基础。
