Preparation and the Photoelectric Properties of ZnO-SiO Films with a Sol-Gel Method Combined with Spin-Coating.

This study explores the fabrication of ZnO-SiO composite films on silicon substrates via a sol-gel method combined with spin-coating, followed by annealing at various temperatures. The research aims to enhance the UV emission and photoelectric properties of the films. XRD showed that the prepared ZnO sample has a hexagonal structure. SEM images revealed the formation of ZnO nanorods within a dense SiO substrate, ranging from 10 μm to 30 μm in length. Photoluminescent analysis showed that the film exhibited strong UV emission centered at 360 nm. The response time measurements indicated that the optimal photoresponse time was approximately 2.9 s. These results suggest the potential of ZnO-SiO films as efficient UV-emitting materials with high photoconductivity and a stably reproducible response under visible light, thereby laying the foundation for their application in advanced optoelectronic devices.