Guo Tingting, Pan Zhidong, Li Jing, Sa Zixu, Wang Xusheng, Shen Yehui, Yang Jialin, Chen Chuyao, Zhao Tong, Li Zhi, Chen Xiang, Yang Zai-Xing, Zhu Gangyi, Huo Nengjie, Song Xiufeng, Zhang Shengli, Zeng Haibo
MIIT Key Laboratory of Advanced Display Materials and Devices, Jiangsu Engineering Research Center for Quantum Dot Display, School of Materials Science and Engineering, Institute of Optoelectronics & Nanomaterials, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China.
ACS Nano. 2025 Jan 14;19(1):1302-1315. doi: 10.1021/acsnano.4c13679. Epub 2024 Dec 23.
Reconfigurable field-effect transistors (RFETs) offer notable benefits on electronic and optoelectronic logic circuits, surpassing the integration, flexibility, and cost-efficiency of conventional complementary metal-oxide semiconductor transistors. The low on/off current ratio of these transistors remains a considerable impediment in the practical application of RFETs. To overcome these limitations, a van der Waals heterojunction (vdWH) transistor composed of WSe/TaNiSe has been proposed. By modulating a single back-gate voltage and source-drain voltage inputs, the transistor achieves a switchable polarity configuration and bidirectional rectification, making it capable of functioning as a gate-controlled bidirectional half-wave rectifier. The proposed RFET exhibits tunable positive/negative photovoltaic responses, advanced optoelectronic performance, and a gate-voltage-dependent reversal of the photodetector position. Detailed energy band diagram studies have shown that the reconfigurability of the device arises from carrier blockage resulting from the type-I band structure and carrier injection modulated by gate-dependent Schottky barriers. Consequently, the reconfigurable WSe/TaNiSe vdWH holds significant promise for advanced multifunctional optoelectronic device applications.
可重构场效应晶体管（RFET）在电子和光电子逻辑电路方面具有显著优势，超越了传统互补金属氧化物半导体晶体管的集成度、灵活性和成本效益。这些晶体管的开/关电流比低，仍然是RFET实际应用中的一个重大障碍。为了克服这些限制，人们提出了一种由WSe/TaNiSe组成的范德华异质结（vdWH）晶体管。通过调制单个背栅电压和源漏电压输入，该晶体管实现了可切换的极性配置和双向整流，使其能够用作栅极控制的双向半波整流器。所提出的RFET表现出可调的正/负光伏响应、先进的光电子性能以及光探测器位置的栅极电压依赖性反转。详细的能带图研究表明，该器件的可重构性源于I型能带结构导致的载流子阻挡以及由栅极依赖的肖特基势垒调制的载流子注入。因此，可重构的WSe/TaNiSe vdWH在先进的多功能光电器件应用方面具有巨大潜力。
