Iwakami Sogo, Yakushiji Shunya, Ohba Tomonori
Graduate School of Science, Chiba University, 1-33 Yayoi, Inage, Chiba 263-8522, Japan.
ACS Appl Mater Interfaces. 2025 Jan 8;17(1):1992-1999. doi: 10.1021/acsami.4c17257. Epub 2024 Dec 26.
Graphene-based materials have gained attention for their promise in various applications owing to their two-dimensional structure. Functionalizing the graphene surface can help realize materials with noble properties. In this study, graphene was functionalized by plasma treatment in O, H, and Ar environments, and the effects on the NH gas-sensing performance were evaluated. The O plasma treatment induced oxidation of the graphene (i.e., graphoxide), while the H plasma treatment induced hydrogenation (i.e., graphane). Raman scattering spectroscopy suggested that graphoxide had vacancy-type defects and graphane had sp-type defects, while Ar-treated graphene had both types of defects. Graphane had the highest sheet resistance followed by graphoxide, Ar-treated graphene, and pristine graphene, which can be attributed to the large bandgap of 3.0 eV for graphane. In contrast, graphoxide had the best NH gas-sensing performance, which indicates that NH gas interacts more strongly with vacancy-type defects than with sp-type defects. The results showed that functionalizing the graphene structure generated noble materials with a superior NH gas-sensing performance compared with pristine graphene.
基于石墨烯的材料因其二维结构在各种应用中的潜力而受到关注。对石墨烯表面进行功能化处理有助于实现具有优异性能的材料。在本研究中,通过在氧气、氢气和氩气环境中进行等离子体处理对石墨烯进行功能化,并评估其对氨气传感性能的影响。氧气等离子体处理导致石墨烯氧化(即生成氧化石墨烯),而氢气等离子体处理导致石墨烯氢化(即生成氢化石墨烯)。拉曼散射光谱表明,氧化石墨烯具有空位型缺陷,氢化石墨烯具有sp型缺陷,而经氩气处理的石墨烯同时具有这两种类型的缺陷。氢化石墨烯的薄层电阻最高,其次是氧化石墨烯、经氩气处理的石墨烯和原始石墨烯,这可归因于氢化石墨烯具有3.0电子伏特的大带隙。相比之下,氧化石墨烯具有最佳的氨气传感性能,这表明氨气与空位型缺陷的相互作用比与sp型缺陷的相互作用更强。结果表明,与原始石墨烯相比,对石墨烯结构进行功能化处理可生成具有优异氨气传感性能的优质材料。