Baek Sung-Doo, Shao Wenhao, Feng Weijie, Tang Yuanhao, Lee Yoon Ho, Loy James, Gunnarsson William B, Yang Hanjun, Zhang Yuchen, Faheem M Bilal, Kaswekar Poojan Indrajeet, Atapattu Harindi R, Qin Jiajun, Coffey Aidan H, Park Jee Yung, Yang Seok Joo, Yang Yu-Ting, Zhu Chenhui, Wang Kang, Graham Kenneth R, Gao Feng, Qiao Quinn, Guo L Jay, Rand Barry P, Dou Letian
Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN, USA.
Macromolecular Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
Nat Commun. 2024 Dec 30;15(1):10760. doi: 10.1038/s41467-024-55075-3.
Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr m. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.
金属卤化物钙钛矿在下一代发光二极管方面展现出了潜力，特别是在近红外范围内，它们的性能优于有机和量子点同类产品。然而，它们仍不及成本高昂的III-V族半导体器件，后者能在高亮度下实现超过30%的外量子效率。在诸多因素中，控制晶粒生长和纳米级形态对于进一步提升器件性能至关重要。本研究提出了一种晶粒工程方法，该方法将溶剂工程与异质结构构建相结合，以提高光出射耦合效率并实现缺陷钝化。溶剂工程能够精确控制晶粒尺寸和分布，将光出射耦合提高到约40%。用共轭阳离子构建二维/三维异质结构可降低缺陷密度并加速辐射复合。由此得到的近红外钙钛矿发光二极管实现了31.4%的峰值外量子效率，并展现出929 W sr m的最大亮度。这些发现表明，钙钛矿发光二极管作为具有成本效益的高性能近红外光源在实际应用中具有潜力。
