Baek Sung-Doo, Kwon Do-Kyun, Kim Yun Cheol, Myoung Jae-Min
Department of Materials Science and Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Republic of Korea.
ACS Appl Mater Interfaces. 2020 Feb 5;12(5):6037-6047. doi: 10.1021/acsami.9b18507. Epub 2020 Jan 27.
As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal-organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the first time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin film/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin film layer was prepared by an iodination process of Cu films, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 × 1 mm-area pixel fabricated using the p-CuI thin film at the iodination temperature of 15 °C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.
随着照明技术的发展，用于高显色指数照明的紫光发光二极管（LED）的需求不断增长。目前紫光LED技术基于高成本的氮化镓材料和金属有机化学气相沉积工艺；因此，最近人们对开发低成本的替代材料和工艺进行了深入研究。在本研究中，我们首次展示了基于低成本材料和工艺的紫光LED，采用了p-CuI薄膜/n-MgZnO量子点（QD）异质结。p-CuI薄膜层通过铜膜的碘化工艺制备，n-MgZnO层通过旋涂预合成的n-MgZnO量子点沉积。为了使紫光LED的性能最大化，对p型和n型材料的每一层都进行了优化工艺。在15°C的碘化温度下使用p-CuI薄膜以及在镁合金化浓度为2.7原子%的情况下使用n-MgZnO量子点制造的面积为1×1mm的像素优化LED，在6V时表现出最强的紫光发射。
