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基于二维半导体的中等规模柔性集成电路。

Medium-scale flexible integrated circuits based on 2D semiconductors.

作者信息

Peng Yalin, Cui Chenyang, Li Lu, Wang Yuchen, Wang Qinqin, Tian Jinpeng, Huang Zhiheng, Huang Biying, Zhang Yangkun, Li Xiuzhen, Tang Jian, Chu Yanbang, Yang Wei, Shi Dongxia, Du Luojun, Li Na, Zhang Guangyu

机构信息

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.

China North Vehicle Research Institute, Beijing, China.

出版信息

Nat Commun. 2024 Dec 30;15(1):10833. doi: 10.1038/s41467-024-55142-9.

DOI:10.1038/s41467-024-55142-9
PMID:39737988
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11685994/
Abstract

Two-dimensional (2D) semiconductors, combining remarkable electrical properties and mechanical flexibility, offer fascinating opportunities for flexible integrated circuits (ICs). Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration scale of a few thin film transistors (TFTs), creating a significant disparity in terms of circuit scale and functionality. Here, we demonstrate medium-scale flexible ICs integrating both combinational and sequential elements based on 2D molybdenum disulfide (MoS). By co-optimization of the fabrication processes, flexible MoS TFTs with high device yield and homogeneity are implemented, as well as flexible NMOS inverters with robust rail-to-rail operation. Further, typical IC modules, such as NAND, XOR, half-adder and latch, are created on flexible substrates. Finally, a medium-scale flexible clock division module consisting of 112 MoS TFTs is demonstrated based on an edge-triggered Flip-Flop circuit. Our work scales up 2D flexible ICs to medium-scale, showing promising developments for various applications, including internet of everything, health monitoring and implantable electronics.

摘要

二维(2D)半导体兼具卓越的电学性能和机械柔韧性,为柔性集成电路(IC)提供了极具吸引力的机遇。尽管取得了显著进展,但迄今为止,所展示的二维柔性集成电路仍局限于基本逻辑门和环形振荡器,最大集成规模仅为几个薄膜晶体管(TFT),在电路规模和功能方面存在显著差距。在此,我们展示了基于二维二硫化钼(MoS)集成组合和时序元件的中规模柔性集成电路。通过对制造工艺的协同优化,实现了具有高器件成品率和均匀性的柔性MoS TFT,以及具有稳健轨到轨操作的柔性NMOS反相器。此外,在柔性基板上创建了典型的集成电路模块,如与非门、异或门、半加器和锁存器。最后,基于边沿触发的触发器电路展示了一个由112个MoS TFT组成的中规模柔性时钟分频模块。我们的工作将二维柔性集成电路扩展到中规模,为包括万物互联、健康监测和可植入电子设备在内的各种应用展现了广阔的发展前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/8323f2ca03ff/41467_2024_55142_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/25fb8f2f05a9/41467_2024_55142_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/3361658c7c62/41467_2024_55142_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/153ef3e380e7/41467_2024_55142_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/8323f2ca03ff/41467_2024_55142_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/25fb8f2f05a9/41467_2024_55142_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/3361658c7c62/41467_2024_55142_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/153ef3e380e7/41467_2024_55142_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fde/11685994/8323f2ca03ff/41467_2024_55142_Fig4_HTML.jpg

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本文引用的文献

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Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides.双轴拉伸应变增强单层过渡金属二硫属化物的电子迁移率。
ACS Nano. 2024 Jul 16;18(28):18151-18159. doi: 10.1021/acsnano.3c08996. Epub 2024 Jun 26.
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Enhancing Carrier Mobility in Monolayer MoS Transistors with Process-Induced Strain.通过工艺诱导应变提高单层MoS晶体管中的载流子迁移率。
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Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS Thin Film Transistors.
用于在MoS薄膜晶体管中实现均匀双轴拉伸应变的非常规应变工程
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Low power flexible monolayer MoS integrated circuits.低功耗柔性单层 MoS 集成电路。
Nat Commun. 2023 Jun 19;14(1):3633. doi: 10.1038/s41467-023-39390-9.
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2D Semiconductor Based Flexible Photoresponsive Ring Oscillators for Artificial Vision Pixels.用于人工视觉像素的基于二维半导体的柔性光响应环形振荡器。
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