Isoda Yosuke, Pham Thanh Ngoc, Aso Ryotaro, Nakamizo Shuri, Majima Takuya, Hosokawa Saburo, Nitta Kiyofumi, Morikawa Yoshitada, Shimakawa Yuichi, Kan Daisuke
Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan.
Department of Precision Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan.
Nat Commun. 2025 Jan 2;16(1):56. doi: 10.1038/s41467-024-55517-y.
Electrochemically inserting and extracting hydrogen into and from solids are promising ways to explore materials' phases and properties. However, it is still challenging to identify the structural factors that promote hydrogen insertion and extraction and to develop materials whose functional properties can be largely modulated by inserting and extracting hydrogen through solid-state reactions at room temperature. In this study, guided by theoretical calculations on the energies of oxygen reduction and hydrogen insertion reactions with oxygen-deficient perovskite oxides, we demonstrated that the oxygen vacancy ordering in Sr(FeCo)O (SFCO) epitaxial films can be stabilized by increasing the Co content (x ≥ 0.3) and revealed that it plays a key role in promoting proton accommodation into the SFCO lattice. We also show that the electrical resistance of SFCO films can be reversibly modulated by electrochemical proton insertion and extraction, and the modulation exceeds three orders of magnitude for Sr(FeCo)O epitaxial films. Our results provide guidelines for controlling material properties through the insertion and extraction of hydrogen and for designing and exploring hydrogen-insertion materials.
通过电化学方法将氢插入固体材料以及从固体材料中提取氢,是探索材料相和性质的有前景的方法。然而,确定促进氢插入和提取的结构因素,以及开发能够通过室温下的固态反应插入和提取氢从而在很大程度上调节其功能特性的材料,仍然具有挑战性。在本研究中,以对缺氧钙钛矿氧化物的氧还原和氢插入反应能量的理论计算为指导,我们证明了通过增加Co含量(x≥0.3)可以稳定Sr(FeCo)O(SFCO)外延膜中的氧空位有序排列,并揭示了其在促进质子进入SFCO晶格中起着关键作用。我们还表明,通过电化学质子插入和提取可以可逆地调节SFCO薄膜的电阻,对于Sr(FeCo)O外延膜,这种调节超过三个数量级。我们的结果为通过氢的插入和提取来控制材料性能以及设计和探索氢插入材料提供了指导。