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磁性多层磁盘中单个斯格明子袋的室温生成与转换

Room-temperature creation and conversion of individual skyrmion bags in magnetic multilayered disks.

作者信息

Liu Quan, Dong Shouzhe, Wang Yutong, Liu Junhang, Xu Guofu, Bai Hua, Bai Hao, Sun Weideng, Cheng Zhiying, Yan Yunjie, Chai Guozhi, Ma Jing, Cai Jianwang, Song Cheng, Jiang Wanjun, Zhu Jing, Nan Cewen, Huang Houbing, Zhao Yonggang

机构信息

Department of Physics, State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.

Frontier Science Center for Quantum Information, Tsinghua University, Beijing, 100084, China.

出版信息

Nat Commun. 2025 Jan 2;16(1):125. doi: 10.1038/s41467-024-55489-z.

Abstract

Skyrmion bags, with arbitrary topological charge Q, have recently attracted much interest, since such high-Q topological systems could open a way for topological magnetism research and are promising for spintronic applications with high flexibility for information encoding. Investigation on room-temperature skyrmion bags in magnetic multilayered structures is essential for applications and remains unexplored so far. Here, we demonstrate room-temperature creation and manipulation of individual skyrmion bags in magnetic multilayered disks. Individual skyrmion bags with varying topological charges are identified to remain stable at zero field. Furthermore, we realize intriguing field-driven topological conversion of skyrmion bags, as well as local manipulation of skyrmion bags via magnetic tips. Micromagnetic simulations indicate that the special boundary condition of the disks is responsible for skyrmion-bag formation and stability. These findings provide a platform to investigate individual skyrmion bags in confined multilayered structures, which could be useful for developing high-Q-based topological spintronic devices.

摘要

具有任意拓扑电荷Q的斯格明子袋最近引起了广泛关注,因为这种高Q拓扑系统可能为拓扑磁性研究开辟一条道路,并且有望用于具有高度信息编码灵活性的自旋电子学应用。对磁性多层结构中室温下的斯格明子袋进行研究对于应用至关重要,而目前尚未得到探索。在此,我们展示了在磁性多层磁盘中室温下单个斯格明子袋的产生和操控。具有不同拓扑电荷的单个斯格明子袋被确定在零场下保持稳定。此外,我们实现了斯格明子袋有趣的场驱动拓扑转换,以及通过磁尖对斯格明子袋进行局部操控。微磁模拟表明,磁盘的特殊边界条件是斯格明子袋形成和稳定的原因。这些发现为研究受限多层结构中的单个斯格明子袋提供了一个平台,这对于开发基于高Q的拓扑自旋电子器件可能是有用的。

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