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关于W/CoFeB上斯格明子稳定性和输运的计算研究。

Computational study of skyrmion stability and transport on W/CoFeB.

作者信息

Cheng Tsz Chung, Zhang Lin, Kurokawa Yuichiro, Satone Ryuta, Tokunaga Kazuhiko, Yuasa Hiromi

机构信息

Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, 819-0382, Japan.

出版信息

Sci Rep. 2025 Mar 5;15(1):7708. doi: 10.1038/s41598-025-91415-z.

Abstract

Skyrmions are topologically protected magnetic structures originating from Dzyaloshinbskii-Moriya Interaction (DMI) which can be driven by a spin-polarized current making it a candidate for many different novel spintronic devices. However, the transport velocity is proportional to the size of the skyrmion rendering the effort of miniaturizing spintronics devices useless indicating that it is not possible to realise high-speed transport, small size and low operating current at the same time. One approach to solving the trilemma is to increase the spin Hall angle [Formula: see text], the conversion ratio between charge current and spin current, in the heavy metal layer. For example, beta-tungsten (β-W) has attracted attention due to its high spin Hall angle, abundance in nature and the potential to combine with other materials to form complex structures. To characterise the use of β-W as a heavy metal layer along with a CoFeB magnetic layer, the interfacial DMI and the external field required to generate skyrmions were estimated to be 1.5 [Formula: see text] and 0.1 T respectively, which were confirmed to be realistic. In that case, the about 10 nm diameter skyrmion was transported under SOT at a velocity of about 40 m/s, which has the potential for skyrmion-based unconventional computing devices like skyrmion race track memory and logic gate.

摘要

斯格明子是由Dzyaloshinbskii-Moriya相互作用(DMI)产生的拓扑保护磁结构,其可由自旋极化电流驱动,这使其成为许多不同新型自旋电子器件的候选者。然而,传输速度与斯格明子的尺寸成正比,这使得自旋电子器件小型化的努力变得无用,这表明不可能同时实现高速传输、小尺寸和低工作电流。解决这一难题的一种方法是增加重金属层中的自旋霍尔角[公式:见原文],即电荷电流与自旋电流之间的转换率。例如,β-钨(β-W)因其高自旋霍尔角、自然界中的丰富储量以及与其他材料结合形成复杂结构的潜力而受到关注。为了表征β-W作为重金属层与CoFeB磁性层一起的使用情况,估计产生斯格明子所需的界面DMI和外场分别为1.5[公式:见原文]和0.1 T,这被证实是现实可行的。在这种情况下,直径约10 nm的斯格明子在自旋轨道扭矩(SOT)作用下以约40 m/s的速度传输,这对于基于斯格明子的非常规计算设备(如斯格明子赛道存储器和逻辑门)具有潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19aa/11882837/194a2fa1476e/41598_2025_91415_Fig1_HTML.jpg

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