Mikhchin Alireza, Hosseini Seyed Iman, Khodadadi Najaf Abadi Saeid, Mohammadhosseini Babak, Mehrabian Somayeh
Faculty of Physics, Shahrood University of Technology, 3619995161, Shahrood, Iran.
Department of Physics, Faculty of Science, Imam Khomeini International University, Qazvin, Iran.
Heliyon. 2024 Nov 6;10(22):e40171. doi: 10.1016/j.heliyon.2024.e40171. eCollection 2024 Nov 30.
This study evaluates the deposition of diamond-like carbon (DLC) films with copper impurities on a glass substrate using simultaneous direct current (DC) and radio frequency (RF) magnetron sputtering. The structural, optical, electrical, and mechanical properties, as well as the surface topography of the films, were investigated under various DC power levels using Raman spectroscopy, ellipsometry, UV-VIS, I-V measurements, nanoindentation, AFM, and FESEM. Results indicate that increasing the DC power to the graphite target from 60 to 120 , while maintaining a constant 10 of RF power to the copper target, enhances the optical absorption coefficient of the films and increases the optical bandgap from 0.95 eV to 1.55 eV. Concurrently, the refractive index decreases from 1.84 to 1.64. Raman spectra reveal that the G peak position and the I/I ratio decrease, suggesting an increase in sp³ bonds relative to sp bonds in the film structure. The surface topography shows increased deposition power raises the surface roughness of the films. Optical emission spectroscopy (OES) during deposition indicates that higher DC power reduces the relative intensity of Cu active species, leading to less Cu embedded in the film structure. Additionally, the emission spectrum shows an increase in hydrogen-containing species, suggesting a rise in sp³ C-H bonds compared to sp³ C-C bonds in the film structure.
本研究采用直流（DC）和射频（RF）磁控溅射同时作用，评估了含铜杂质的类金刚石碳（DLC）薄膜在玻璃基板上的沉积情况。使用拉曼光谱、椭偏仪、紫外 - 可见光谱、电流 - 电压测量、纳米压痕、原子力显微镜（AFM）和场发射扫描电子显微镜（FESEM），在不同直流功率水平下研究了薄膜的结构、光学、电学和力学性能以及表面形貌。结果表明，将石墨靶的直流功率从60提高到120，同时保持铜靶的射频功率恒定为10，会提高薄膜的光吸收系数，并使光学带隙从0.95 eV增加到1.55 eV。同时，折射率从1.84降低到1.64。拉曼光谱显示，G峰位置和I/I比降低，表明薄膜结构中sp³键相对于sp键增加。表面形貌表明沉积功率增加会提高薄膜的表面粗糙度。沉积过程中的光发射光谱（OES）表明，较高的直流功率会降低铜活性物种的相对强度，导致嵌入薄膜结构中的铜减少。此外，发射光谱显示含氢物种增加，表明薄膜结构中sp³ C - H键相对于sp³ C - C键增加。
