Jopp Jürgen, Kovalyuk Vadim, Towe Elias, Shneck Roni, Dashevsky Zinovi, Auslender Mark
Ilse Katz Institute for Nanoscale Science & Technology, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel.
Department of Physics, Moscow State Pedagogical University, 119992 Moscow, Russia.
Materials (Basel). 2024 Dec 11;17(24):6058. doi: 10.3390/ma17246058.
Nowadays, polycrystalline lead telluride is one of the premier substances for thermoelectric devices while remaining a hopeful competitor to current semiconductor materials used in mid-infrared photonic applications. Notwithstanding that, the development of reliable and reproducible routes for the synthesis of PbTe thin films has not yet been accomplished. As an effort toward this aim, the present article reports progress in the growth of polycrystalline indium-doped PbTe films and their study. The introduction foregoing the main text presents an overview of studies in these and closely related research fields for seven decades. The main text reports on the electron-beam-assisted physical vapor deposition of n-type indium-doped PbTe films on two different amorphous substrates. This doping of PbTe is unique since it sets electron density uniform over grains due to pinning the Fermi level. In-house optimized parameters of the deposition process are presented. The films are structurally characterized by a set of techniques. The transport properties of the films are measured with the original setups described in detail. The infrared transmission spectra are measured and simulated with the original optical-multilayer modeling tool described in the appendix. Conclusions of films' quality in terms of these properties altogether are drawn.
如今，多晶碲化铅是用于热电设备的主要材料之一，同时也是当前用于中红外光子应用的半导体材料的有力竞争者。尽管如此，尚未实现合成碲化铅薄膜的可靠且可重复的方法。作为朝着这一目标的努力，本文报道了多晶铟掺杂碲化铅薄膜生长及其研究的进展。正文之前的引言概述了七十年来这些及密切相关研究领域的研究情况。正文报道了在两种不同的非晶衬底上进行n型铟掺杂碲化铅薄膜的电子束辅助物理气相沉积。碲化铅的这种掺杂很独特，因为通过固定费米能级，它能使晶粒上的电子密度均匀。文中给出了沉积过程的内部优化参数。用一组技术对薄膜进行结构表征。用详细描述的原始装置测量薄膜的输运性质。用附录中描述的原始光学多层建模工具测量和模拟红外透射光谱。综合这些性质得出了薄膜质量的结论。
