Gadzhiev Makhach Kh, Muslimov Arsen E, Yusupov Damir I, Il'ichev Maksim V, Kulikov Yury M, Chistolinov Andrey V, Venevtsev Ivan D, Volchkov Ivan S, Kanevsky Vladimir M, Tyuftyaev Alexander S
Joint Institute for High Temperatures, Russian Academy of Sciences, 125412 Moscow, Russia.
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics, National Research Centre "Kurchatov Institute", 119333 Moscow, Russia.
Materials (Basel). 2024 Dec 12;17(24):6078. doi: 10.3390/ma17246078.
This paper presents the initial results of the synthesis of β-GaO luminescent ceramics via plasma gas-thermal spraying synthesis, where low-temperature plasma of an argon and nitrogen mixture was employed. A direct current electric arc generator of high-enthalpy plasma jet with a self-aligning arc length and an expanding channel of an output electrode served as a plasma source. The feedstock material consisted of a polydisperse powder of monocrystalline β-GaO with particle sizes ranging from 5 to 50 μm. The study presents the results of both theoretical and experimental studies on the heating rate and average temperature of gallium oxide particles in a plasma jet. The results of computational modelling of the synthesis process of β-GaO via plasma gas-thermal spraying are shown. The obtained ceramic samples were characterized using scanning electron microscopy and X-ray diffraction analysis. Our results indicate that the synthesis process yielded ceramics with a layered texture. The stoichiometric composition of ceramics exhibited a shift towards gallium-rich content. X-ray diffraction data demonstrated a reduction in the lattice parameters and unit cell volume of β-GaO ceramic structure. Radioluminescence spectra of β-GaO ceramics revealed an intensive emission band with a maximum at ~360 nm and non-exponential decay. The synthesized β-GaO ceramics possess potential applications in scintillation detectors.
本文介绍了通过等离子体气体热喷涂合成β-GaO发光陶瓷的初步结果,其中使用了氩气和氮气混合物的低温等离子体。具有自对准电弧长度和输出电极扩展通道的高焓等离子体射流直流电弧发生器用作等离子体源。原料由粒径为5至50μm的多分散单晶β-GaO粉末组成。该研究展示了关于等离子体射流中氧化镓颗粒加热速率和平均温度的理论和实验研究结果。给出了通过等离子体气体热喷涂合成β-GaO的计算模拟结果。使用扫描电子显微镜和X射线衍射分析对所得陶瓷样品进行了表征。我们的结果表明,合成过程产生了具有层状纹理的陶瓷。陶瓷的化学计量组成显示出向富镓含量的偏移。X射线衍射数据表明β-GaO陶瓷结构的晶格参数和晶胞体积减小。β-GaO陶瓷的放射性发光光谱显示出一个在~360nm处具有最大值的强发射带和非指数衰减。合成的β-GaO陶瓷在闪烁探测器中具有潜在应用。