He Yongjie, Zhao Feiyang, Huang Bin, Zhang Tianyi, Zhu Hao
School of Microelectronics, Fudan University, Shanghai 200433, China.
National Integrated Circuit Innovation Center, Shanghai 201203, China.
Materials (Basel). 2024 Apr 18;17(8):1870. doi: 10.3390/ma17081870.
As the most stable phase of gallium oxide, β-GaO can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7-4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type GaO limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-GaO power diodes and gives a brief introduction to their thermal management and circuit applications.
作为氧化镓最稳定的相，β-GaO可通过熔体法制备出高质量、大尺寸、低成本且可控制掺杂的晶片。它还具有4.7-4.9电子伏特的带隙、8兆伏/厘米的临界电场强度以及高达3444的贝利加优值（BFOM），分别比碳化硅和氮化镓高10倍和4倍，在功率器件应用中显示出巨大潜力。然而，缺乏有效的p型GaO限制了双极器件的发展。大多数研究集中在单极器件上，近年来取得了突破。本综述主要总结了不同结构的β-GaO功率二极管的研究进展，并简要介绍了它们的热管理和电路应用。
