p型渐变组分AlGaN超晶格的设计与生长

Design and Growth of P-Type AlGaN Graded Composition Superlattice.

作者信息

Liu Yang, Yang Xue, Zhou Xiaowei, Li Peixian, Yang Bo, Zhao Zhuang, Xiang Yingru, Bai Junchun

机构信息

School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.

出版信息

Micromachines (Basel). 2024 Nov 26;15(12):1420. doi: 10.3390/mi15121420.

DOI:10.3390/mi15121420

PMID:39770174

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11677290/

Abstract

A graded composition superlattice structure is proposed by combining simulation with experimentation. The structural factors affecting graded symmetric superlattices and graded asymmetric superlattices and their action modes are simulated and analyzed. A Mg-doped graded symmetric superlattice structure with high Al content, excellent structural quality, good surface morphology and excellent electrical properties was grown by MOCVD equipment. The AlGaN superlattice with Al composition of 0.7 in the barrier exhibits a hole concentration of approximately 5 × 10 cm and a resistivity of 66 Ω·cm.

摘要

通过模拟与实验相结合的方式，提出了一种梯度复合超晶格结构。对影响梯度对称超晶格和梯度非对称超晶格的结构因素及其作用模式进行了模拟与分析。利用金属有机化学气相沉积（MOCVD）设备生长出了具有高铝含量、优异结构质量、良好表面形貌和优异电学性能的掺镁梯度对称超晶格结构。势垒层中铝组分为0.7的AlGaN超晶格表现出约5×10¹⁷ cm⁻³的空穴浓度和66 Ω·cm的电阻率。