Langpoklakpam Catherine, Liu An-Chen, Hsiao Yi-Kai, Lin Chun-Hsiung, Kuo Hao-Chung
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang-Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan.
Micromachines (Basel). 2023 Oct 16;14(10):1937. doi: 10.3390/mi14101937.
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.
氮化镓（GaN）具有显著特性，如宽带隙、高临界电场、强大的抗辐射性能以及适用于高功率器件的高饱和速度。这些特性使GaN成为功率器件发展的关键材料。在各种基于GaN的器件中，垂直GaN MOSFET因其相对于硅MOSFET具有众多优势而脱颖而出。这些优势涵盖高功率器件应用。本综述简要概述了它们的重要性，并探讨了其独特架构。此外，还深入研究了垂直GaN MOSFET的优势并突出了其近期进展。总之，该综述探讨了提高垂直GaN器件击穿电压的方法。这一全面视角强调了垂直GaN MOSFET在电力电子领域的关键作用及其不断的进步。
