Zha Xian-Hu, Li Shuang, Wan Yu-Xi, Zhang Dao Hua
Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory, Shenzhen 518111, China.
Nano and Heterogeneous Materials Center School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
J Phys Chem Lett. 2025 Jan 16;16(2):587-595. doi: 10.1021/acs.jpclett.4c03493. Epub 2025 Jan 7.
β-GaO is a candidate semiconductor material for high-power electronics due to its ultrawide bandgap and high Baliga's figure of merit. However, its -type doping is extremely difficult because of its low and flat band dispersion at its valence band maximum (VBM). A few reports have predicted that the VBM of β-GaO can be enhanced via alloying a specific metal (M), which enables -type conduction. To fully understand the M regulation on the valence band of β-GaO, 49 different M-alloyed β-GaO , β-(MGa)O, are investigated in this work through first-principles calculations. The alloys' configurations and electronic structures are found dependent more on the group number of M. The β-(MGa)O members with Ms in groups 3, 9, 13, and 15 and the Ms of Be, Cr, and Fe are semiconductors. The VBMs' energies are enhanced by more than 1 in the β-(MGa)O for the Ms of Rh, Ir, Sb, and Bi because these VBMs are newly formed by the orbital hybridization of the Ms and neighboring oxygen atoms. The band dispersions at VBMs generally become steeper, especially for Ms in groups 13 and 15. The average hole effective mass in β-(AlGa)O is only 3.43% of that in the β-GaO. It is believed that the reduced hole effective mass and increased VBMs' energies make the -type doping easier in these alloys and the applications of the alloys wider.
