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氮化铝镓/氮化铝异质结构:集成光子学的新兴平台。

AlGaN/AlN heterostructures: an emerging platform for integrated photonics.

作者信息

Gündoğdu Sinan, Pazzagli Sofia, Pregnolato Tommaso, Kolbe Tim, Hagedorn Sylvia, Weyers Markus, Schröder Tim

机构信息

Department of Physics, Humboldt-Universität zu Berlin, Berlin, Germany.

Ferdinand-Braun-Institut (FBH), Berlin, Germany.

出版信息

Npj Nanophoton. 2025;2(1):2. doi: 10.1038/s44310-024-00048-z. Epub 2025 Jan 7.

Abstract

We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip nonlinear optical devices. AlGaN combines compatibility with standard photonic fabrication technologies and high electro-optic modulation capabilities with low loss over a broad spectral range, from UVC to long-wave infrared, making it a viable material for complex photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate several photonic components. In particular, we fabricate edge couplers, low-loss waveguides, directional couplers, and tunable high-quality factor ring resonators. These devices will enable nonlinear light-matter interaction and quantum functionality. The comprehensive platform we present in this work paves the way for photon-pair generation applications, on-chip quantum frequency conversion, and fast electro-optic modulation for switching and routing classical and quantum light fields.

摘要

我们介绍了一种用于集成光子学的新型材料,并研究了氮化铝(AlN)模板上的氮化铝镓(AlGaN),将其作为开发可重构片上非线性光学器件的平台。AlGaN兼具与标准光子制造技术的兼容性、高电光调制能力以及在从深紫外(UVC)到长波红外的宽光谱范围内的低损耗特性,使其成为复杂光子应用的可行材料。在这项工作中,我们设计并生长了AlGaN/AlN异质结构,并集成了多个光子组件。特别是,我们制造了边缘耦合器、低损耗波导、定向耦合器和可调谐高品质因数环形谐振器。这些器件将实现非线性光与物质的相互作用以及量子功能。我们在这项工作中展示的综合平台为光子对产生应用、片上量子频率转换以及用于切换和路由经典和量子光场的快速电光调制铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4b3f/11706782/a74367d796a4/44310_2024_48_Fig1_HTML.jpg

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