Martini Francesco, Politi Alberto
Opt Express. 2017 May 15;25(10):10735-10742. doi: 10.1364/OE.25.010735.
The development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching -6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics.
为了促进不同量子和经典组件在同一芯片内的集成,需要开发具有多种光学能力的新型光子材料。在所有候选材料中,立方碳化硅(3C SiC)的卓越光学特性可以与其晶体点缺陷相结合,从而在单个器件上实现单光子的产生、操控以及光与物质的相互作用。碳化硅光子器件的发展一直受到硅衬底的限制,在硅衬底上异质外延生长着薄晶体薄膜。通过在材料制造中采用一种新颖的方法,我们展示了耦合效率达到-6 dB的光栅耦合器、亚微米波导以及具有高本征品质因数(高达24,000)的环形谐振器。这些组件是线性光学网络的基础,对于开发用于非线性和量子光学的各种光子组件至关重要。