Iacob Nicusor, Chirila Cristina, Sangaré Mama, Kuncser Andrei, Stanciu Anda E, Socol Marcela, Negrila Catalin C, Botea Mihaela, Locovei Claudiu, Schinteie Gabriel, Galca Aurelian C, Stanculescu Anca, Pintilie Lucian, Kuncser Victor, Borca Bogdana
National Institute of Materials Physics, 077125 Magurele, Ilfov, Romania.
Institute of Applied Sciences, University of Sciences, Techniques and Technology of Bamako (USTTB), Bamako, Mali.
Heliyon. 2024 Dec 12;11(1):e41171. doi: 10.1016/j.heliyon.2024.e41171. eCollection 2025 Jan 15.
Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K. The non-volatile resistance states of the multiferroic spintronic junction with two-terminals are manipulated by a combined action of small external magnetic and electric fields. Thus, the magnetic field controls the relative orientation of the magnetization of the metallic ferromagnetic electrodes, that leads to different magnetoresistance states. The orientation and the magnitude of the electric field controls the orientation of the polarization of the guanine ferroelectric barrier, that leads to different electroresistance states, respectively. Moreover, we have observed a strong interfacial coupling of the two parameters. Consequently, positive and negative magnetoresistance hysteresis loops corresponding to spin rectification effects and non-hysteretic (erased) resistive states are manipulated with the electric field by switching the orientation of the electrical polarization of the organic ferroelectric.
非易失性电子存储元件在各种应用中极具吸引力，不仅适用于信息存储，还可用于逻辑电路、传感设备和神经形态计算。在此，鸟嘌呤核碱基的铁电薄膜被用于夹在钴和钴铬合金这两种不同铁磁薄膜之间的电阻式记忆结中。这些磁性薄膜具有面内易磁化轴和不同的矫顽场，而鸟嘌呤薄膜在100K时确保了非常长的自旋输运长度。具有双端的多铁性自旋电子结的非易失性电阻状态通过小外部磁场和电场的联合作用来操控。因此，磁场控制金属铁磁电极磁化的相对取向，这导致不同的磁阻状态。电场的取向和大小分别控制鸟嘌呤铁电势垒极化的取向，这导致不同的电阻状态。此外，我们观察到这两个参数之间存在强界面耦合。因此，通过切换有机铁电体的电极化取向，利用电场操控了对应于自旋整流效应的正负磁阻磁滞回线以及非滞后（擦除）电阻状态。
