• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

具有氧化锌锡/碳纳米管堆叠纳米复合有源层的溶液基薄膜晶体管的电学特性

Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer.

作者信息

Kim Yong-Jae, Choi Woon-Seop

机构信息

Department of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of Korea.

出版信息

Nanomaterials (Basel). 2024 Dec 27;15(1):22. doi: 10.3390/nano15010022.

DOI:10.3390/nano15010022
PMID:39791782
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11723404/
Abstract

A stacked nanocomposite zinc-tin oxide/single-walled carbon nanotubes (ZTO/SWNTs) active layer was fabricated for thin-film transistors (TFTs) as an alternative to the conventional single-layer structure of mixed ZTO and SWNTs. The stacked nanocomposite of the solution-processed TFTs was prepared using UV/O treatment and multiple annealing steps for each layer. The electrical properties of the stacked device were superior to those of the single-layer TFT. The ZTO/SWNT TFT, fabricated using a stacked structure with ZTO on the top and SWNT at the bottom layer, showed a significant improvement in the field-effect mobility of 15.37 cm2/V·s (factor of three increase) and an I/I current ratio of 8.83 × 108 with improved hysteresis. This outcome was attributed to the surface treatment and multiple annealing of the selected active layer, resulting in improved contact and a dense structure. This was also attributed to the controlled dispersion of SWNT, as electron migration paths without dispersants. This study suggests the potential expansion of applications, such as flexible electronics and low-cost fabrication of TFTs.

摘要

制备了一种堆叠式纳米复合氧化锌锡/单壁碳纳米管（ZTO/SWNTs）有源层用于薄膜晶体管（TFT），以替代传统的ZTO和SWNTs混合单层结构。采用紫外线/臭氧（UV/O）处理和对每层进行多次退火步骤来制备溶液处理TFT的堆叠纳米复合材料。堆叠器件的电学性能优于单层TFT。采用顶层为ZTO、底层为SWNT的堆叠结构制造的ZTO/SWNT TFT，场效应迁移率显著提高至15.37 cm2/V·s（提高了两倍），开/关电流比为8.83×108，滞后现象得到改善。这一结果归因于所选有源层的表面处理和多次退火，从而改善了接触并形成了致密结构。这也归因于SWNT的可控分散，即无分散剂时的电子迁移路径。该研究表明了其在诸如柔性电子和TFT低成本制造等应用方面的潜在扩展。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/521be3549e59/nanomaterials-15-00022-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/353bcc10ba52/nanomaterials-15-00022-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/90250c2bce65/nanomaterials-15-00022-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/88d0a54c01e7/nanomaterials-15-00022-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/46d9057ed88d/nanomaterials-15-00022-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/0d11cd66de51/nanomaterials-15-00022-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/d4756b05ddfc/nanomaterials-15-00022-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/895beebaae99/nanomaterials-15-00022-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/7be1868d2723/nanomaterials-15-00022-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/521be3549e59/nanomaterials-15-00022-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/353bcc10ba52/nanomaterials-15-00022-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/90250c2bce65/nanomaterials-15-00022-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/88d0a54c01e7/nanomaterials-15-00022-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/46d9057ed88d/nanomaterials-15-00022-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/0d11cd66de51/nanomaterials-15-00022-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/d4756b05ddfc/nanomaterials-15-00022-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/895beebaae99/nanomaterials-15-00022-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/7be1868d2723/nanomaterials-15-00022-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/11723404/521be3549e59/nanomaterials-15-00022-g009.jpg

相似文献

1
Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer.具有氧化锌锡/碳纳米管堆叠纳米复合有源层的溶液基薄膜晶体管的电学特性
Nanomaterials (Basel). 2024 Dec 27;15(1):22. doi: 10.3390/nano15010022.
2
Fabrication of Sol Gel Solution-Based Zinc-Tin Oxide/Carbon Nanotube Hybrid Thin-Film for Thin-Film Transistors.用于薄膜晶体管的基于溶胶-凝胶溶液的氧化锌锡/碳纳米管混合薄膜的制备
Micromachines (Basel). 2025 Mar 30;16(4):411. doi: 10.3390/mi16040411.
3
Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.基于溶液法的薄膜晶体管铟锌氧化物/锌锡氧化物沟道层的优化
J Nanosci Nanotechnol. 2018 Sep 1;18(9):5913-5918. doi: 10.1166/jnn.2018.15596.
4
Graded-Band-Gap Zinc-Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection.用于波长选择性光电探测的具有垂直堆叠结构的渐变带隙锌锡氧化物薄膜晶体管。
ACS Appl Mater Interfaces. 2024 Feb 21;16(7):9060-9067. doi: 10.1021/acsami.3c18737. Epub 2024 Feb 9.
5
Effects of Double Active Layer and Acetic Acid Stabilizer on the Electrical Properties of a Solution-Processed Zinc Tin Oxide Thin-Film Transistor.双活性层和乙酸稳定剂对溶液法制备的氧化锌锡薄膜晶体管电学性能的影响
J Nanosci Nanotechnol. 2015 Oct;15(10):7743-7. doi: 10.1166/jnn.2015.11200.
6
A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.一种混合溶液处理的锌锡氧化物薄膜晶体管栅介质及其 MIS 电容。
Sci Rep. 2016 Sep 19;6:33576. doi: 10.1038/srep33576.
7
Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment.通过简单的低压热退火处理改善溶液法制备的锌锡氧化物薄膜晶体管的开关特性和偏置稳定性。
Nanomaterials (Basel). 2023 May 24;13(11):1722. doi: 10.3390/nano13111722.
8
Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing.通过电流体动力喷射印刷制备用于溶液处理薄膜晶体管和互补逆变器的直接图案化锌锡氧化物。
Nanomaterials (Basel). 2020 Jul 3;10(7):1304. doi: 10.3390/nano10071304.
9
Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors.阳离子组成对溶液法制备的氧化锌锡薄膜晶体管电学性能的影响。
ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14026-36. doi: 10.1021/am503351e. Epub 2014 Aug 12.
10
Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability.电液动力喷射印刷的氧化锌锡薄膜晶体管及其偏置稳定性。
ACS Appl Mater Interfaces. 2014 Jul 23;6(14):11167-72. doi: 10.1021/am5009826. Epub 2014 Jul 15.

引用本文的文献

1
Layer-by-Layer Engineered Zinc-Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications.用于薄膜晶体管应用的逐层工程化氧化锌锡/单壁碳纳米管（ZTO/SWNT）混合薄膜
Micromachines (Basel). 2025 Jul 20;16(7):825. doi: 10.3390/mi16070825.

本文引用的文献

1
Micron channel length ZnO thin film transistors using bilayer electrodes.采用双层电极的微米沟道长度氧化锌薄膜晶体管。
J Colloid Interface Sci. 2022 Sep 15;622:769-779. doi: 10.1016/j.jcis.2022.04.016. Epub 2022 Apr 9.
2
High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.具备溶液处理自组装碳纳米管的高速逻辑集成电路。
Nat Nanotechnol. 2017 Sep;12(9):861-865. doi: 10.1038/nnano.2017.115. Epub 2017 Jul 3.
3
Present status of amorphous In-Ga-Zn-O thin-film transistors.非晶铟镓锌氧化物薄膜晶体管的现状
Sci Technol Adv Mater. 2010 Sep 10;11(4):044305. doi: 10.1088/1468-6996/11/4/044305. eCollection 2010 Aug.
4
A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.一种混合溶液处理的锌锡氧化物薄膜晶体管栅介质及其 MIS 电容。
Sci Rep. 2016 Sep 19;6:33576. doi: 10.1038/srep33576.
5
Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability.电液动力喷射印刷的氧化锌锡薄膜晶体管及其偏置稳定性。
ACS Appl Mater Interfaces. 2014 Jul 23;6(14):11167-72. doi: 10.1021/am5009826. Epub 2014 Jul 15.
6
Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.采用碳纳米管和 IGZO 薄膜晶体管混合集成的大规模互补型微电子学。
Nat Commun. 2014 Jun 13;5:4097. doi: 10.1038/ncomms5097.
7
Inkjet-printed In(2)O(3) thin-film transistor below 200 °C.喷墨打印 200°C 以下的 In(2)O(3) 薄膜晶体管。
ACS Appl Mater Interfaces. 2013 Nov 27;5(22):11578-83. doi: 10.1021/am4025774. Epub 2013 Nov 6.
8
Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors.用于独特性能晶体管的非晶氧化铟锌/碳纳米管混合薄膜的合理设计。
Nano Lett. 2012 Jul 11;12(7):3596-601. doi: 10.1021/nl3012648. Epub 2012 Jun 15.