Kim Yong-Jae, Choi Woon-Seop
Department of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of Korea.
Micromachines (Basel). 2025 Mar 30;16(4):411. doi: 10.3390/mi16040411.
Solution-processed oxide thin-film transistors (TFTs) can lead to a significant cost-effective process and suitable for large-scale fabrication. However, they often face limitations, such as lower field-effect mobility, the use of indium which is toxic and rare, and degradation compared to vacuum-based technologies. The single-walled carbon nanotubes (SWNTs) were incorporated with zinc-tin oxide (ZTO) precursor solution without dispersants for the device's active layer. Sol-gel solution-based ZTO/single-wall carbon nanotube (ZTO/SWNT) (TFTs) with various SWNT concentrations were fabricated to improve the performance of ZTO TFTs. ZTO TFTs containing SWNTs exhibited better electrical performance than those without SWNTs. Among the samples, the ZTO TFT with an SWNT concentration of 0.07 wt.% showed a field-effect mobility (μsat) of 13.12 cm/Vs (increased by a factor of 3) and an I/I current ratio of 7.66 × 10 with a lower threshold voltage. SWNTs in the ZTO/SWNTs acted as carrier transfer rods, playing a crucial role in controlling the electrical performance of ZTO TFTs. The proposed fabrication of a sol-gel solution-based process is highly compatible with existing processes because it brings ZTO/SWNT hybrid TFTs closer to practical application, opening up the possibilities for next-generation electronics in flexible devices and low-cost manufacturing.
溶液处理的氧化物薄膜晶体管（TFT）可以带来显著的成本效益高的工艺，并且适用于大规模制造。然而，它们经常面临一些限制，例如较低的场效应迁移率、使用有毒且稀有的铟以及与基于真空的技术相比的性能退化。将单壁碳纳米管（SWNT）与氧化锌锡（ZTO）前驱体溶液混合，且不添加分散剂用于器件的有源层。制备了具有不同SWNT浓度的基于溶胶 - 凝胶溶液的ZTO/单壁碳纳米管（ZTO/SWNT）TFT，以提高ZTO TFT的性能。含有SWNT的ZTO TFT表现出比不含SWNT的ZTO TFT更好的电学性能。在这些样品中，SWNT浓度为0.07 wt.%的ZTO TFT表现出13.12 cm²/Vs的场效应迁移率（μsat）（提高了3倍）以及7.66×10⁷的I/IOFF电流比，且阈值电压更低。ZTO/SWNT中的SWNT充当载流子传输棒，在控制ZTO TFT的电学性能方面起着关键作用。所提出的基于溶胶 - 凝胶溶液的工艺与现有工艺高度兼容，因为它使ZTO/SWNT混合TFT更接近实际应用，为柔性器件和低成本制造中的下一代电子产品开辟了可能性。
