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电子掺杂铜酸盐中的赝能隙:强关联导致能带分裂。

Pseudogap in electron-doped cuprates: Strong correlation leading to band splitting.

作者信息

Horio Masafumi, Sakai Shiro, Suzuki Hakuto, Nonaka Yosuke, Hashimoto Makoto, Lu Donghui, Shen Zhi-Xun, Ohgi Taro, Konno Takuya, Adachi Tadashi, Koike Yoji, Imada Masatoshi, Fujimori Atsushi

机构信息

Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan.

Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan.

出版信息

Proc Natl Acad Sci U S A. 2025 Jan 7;122(1):e2406624122. doi: 10.1073/pnas.2406624122. Epub 2024 Dec 30.

Abstract

The pseudogap phenomena have been a long-standing mystery of the cuprate high-temperature superconductors. The pseudogap in the electron-doped cuprates has been attributed to band folding due to antiferromagnetic (AFM) long-range order or short-range correlation. We performed an angle-resolved photoemission spectroscopy study of the electron-doped cuprates PrLaCeCuO showing spin-glass, disordered AFM behaviors, and superconductivity at low temperatures and, by measurements with fine momentum cuts, found that the gap opens on the unfolded Fermi surface rather than the AFM Brillouin zone boundary. The gap did not show a node, following the full symmetry of the Brillouin zone, and its magnitude decreased from the zone-diagonal to (,0) directions, opposite to the hole-doped case. These observations were reproduced by cluster dynamical-mean-field-theory calculation, which took into account electron correlation precisely within a (CuO) cluster. The present experimental and theoretical results are consistent with the mechanism that electron or hole doping into a Mott insulator creates an in-gap band that is separated from the upper or lower Hubbard band by the pseudogap.

摘要

赝能隙现象一直是铜酸盐高温超导体的一个长期谜团。电子掺杂铜酸盐中的赝能隙被归因于反铁磁(AFM)长程序或短程关联导致的能带折叠。我们对电子掺杂铜酸盐PrLaCeCuO进行了角分辨光电子能谱研究,该材料在低温下表现出自旋玻璃、无序AFM行为和超导性,并且通过精细动量切割测量发现,能隙在未折叠的费米面而非AFM布里渊区边界上打开。能隙没有节点,遵循布里渊区的完全对称性,并且其大小从区对角线到(,0)方向减小,这与空穴掺杂的情况相反。这些观测结果通过团簇动力学平均场理论计算得以重现,该计算在一个(CuO)团簇内精确考虑了电子关联。目前的实验和理论结果与以下机制一致:向莫特绝缘体中进行电子或空穴掺杂会产生一个能隙内能带,该能带通过赝能隙与上或下哈伯德带分离。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2cb4/11725886/2c06c09da794/pnas.2406624122fig01.jpg

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