Yu Cuiping, Lin Yunyao, Wang Yan, Zhang Jianfang, Xia Chenhong, Cui Jiewu, Liu Jiaqin, Zhang Yong, Tan Hark Hoe, Wu Yucheng
School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 China.
School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 China.
J Colloid Interface Sci. 2025 Apr 15;684(Pt 1):403-411. doi: 10.1016/j.jcis.2025.01.018. Epub 2025 Jan 5.
NbO has become a focus of research for its suitability as an anode material in sodium ion capacitors (SICs), due to its open ionic channels. The integration of NbO with reduced graphene oxide (rGO) is known to boost its electrical conductivity. However, the sluggish interfacial charge transfer kinetics and interface collapse of NbO/rGO pose challenges to its rate capability and durability. In this study, oxygen bridges (C-O-Nb bonds) are deliberately incorporated to study how their densities affect the electrochemical characteristics of NbO/rGO. Initially, HO is applied as the functional additive to realize in-situ grafting of oxygen functional groups on graphene oxide (GO), which is referred as GO-H. And GO-H matrix serves as a space confiner to transform the crystallization of NbO from larger microflower structures to smaller nanocrystals. The resulting NbO/rGO with high oxygen bridges (named as NbO/rGO-H) exhibits a substantial proportion of C-O-Nb bonds (47 %), which enhances the charge transfer from rGO to NbO, along with the stabilization of the interface. This leads to the high specific capacity (301.7 mAh g at 0.05 A g), commendable rate capability (98.0 mAh g at 10 A g), and exceptional durability (91.1 % mAh g capacity retention after 2000 cycles). Moreover, a SIC device fabricated with NbO/rGO-H and active carbon (AC) demonstrates an impressive energy density of 149.6 W h kg (at 200 W kg). This investigation underscores the pivotal role of interfacial oxygen bridges in optimizing the charge transfer dynamics and stability of nanoscale energy storage materials.
由于具有开放的离子通道,NbO作为钠离子电容器(SIC)的阳极材料具有适用性,已成为研究热点。已知将NbO与还原氧化石墨烯(rGO)结合可提高其电导率。然而,NbO/rGO缓慢的界面电荷转移动力学和界面坍塌对其倍率性能和耐久性构成挑战。在本研究中,特意引入氧桥(C-O-Nb键)来研究其密度如何影响NbO/rGO的电化学特性。首先,将HO用作功能添加剂,以实现氧官能团在氧化石墨烯(GO)上的原位接枝,即GO-H。GO-H基质作为空间限制剂,将NbO的结晶从较大的微花结构转变为较小的纳米晶体。所得具有高氧桥的NbO/rGO(命名为NbO/rGO-H)表现出相当比例的C-O-Nb键(47%),这增强了从rGO到NbO的电荷转移以及界面的稳定性。这导致了高比容量(在0.05 A g时为301.7 mAh g)、出色的倍率性能(在10 A g时为98.0 mAh g)和优异的耐久性(2000次循环后容量保持率为91.1% mAh g)。此外,用NbO/rGO-H和活性炭(AC)制造的SIC器件表现出令人印象深刻的149.6 W h kg(在200 W kg时)的能量密度。这项研究强调了界面氧桥在优化纳米级储能材料的电荷转移动力学和稳定性方面的关键作用。