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硫化镉离散原子簇的顺序浸润合成法。

Sequential Infiltration Synthesis of Cadmium Sulfide Discrete Atom Clusters.

作者信息

Jayaweera Nuwanthaka P, Havenridge Shana, Bielinski Ashley R, Kim Kihoon, Thompson Niklas B, Hoffman Justin M, Wheaton Amelia M, Sarkar Prasenjit, Pathak Rajesh, Elam Jeffrey W, Liu Cong, Mulfort Karen L, Martinson Alex B F

机构信息

Material Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois, 60439, United States.

Chemical Science and Engineering Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois, 60439, United States.

出版信息

Angew Chem Int Ed Engl. 2025 Mar 3;64(10):e202421259. doi: 10.1002/anie.202421259. Epub 2025 Jan 13.

DOI:10.1002/anie.202421259
PMID:39803756
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11878342/
Abstract

Exposure of soft material templates to alternating volatile chemical precursors can produce inorganic deposition within the permeable template (e.g. a polymer thin film) in a process akin to atomic layer deposition (ALD). While such sequential infiltration synthesis (SIS) processes have now been demonstrated for many metal oxides, we report an SIS process for a transition metal sulfide - CdS. Gas phase dimethyl cadmium and hydrogen sulfide precursors infiltrated into poly(4-vinylpyridine) thin films result in the 3D-nucleation of clusters consistent with a cubane-type CdS core that are variably terminated with methyl, thiol and hydroxy capping ligands. First principles models and simulation of few-atom Cd-based clusters are consistent with electronic and vibrational spectroscopy and grazing-incidence total X-ray scattering measurements of 3D-cluster-arrays synthesized at 80 °C. The direct synthesis of few-atom transition metal sulfide clusters within polymer thin films will provide a versatile new route to precision architectures for light-absorbing materials including solar energy harvesting and conversion applications.

摘要

将柔软材料模板暴露于交替的挥发性化学前驱体中,可在类似于原子层沉积(ALD)的过程中,在可渗透模板(如聚合物薄膜)内产生无机沉积物。虽然现在已经证明许多金属氧化物都可以进行这种顺序浸润合成(SIS)过程,但我们报道了一种用于过渡金属硫化物——硫化镉(CdS)的SIS过程。气相二甲基镉和硫化氢前驱体渗透到聚(4-乙烯基吡啶)薄膜中,导致形成与立方烷型CdS核一致的团簇的三维成核,这些团簇以甲基、硫醇和羟基封端配体进行不同程度的终止。基于第一性原理的少数原子镉基团簇模型和模拟与在80°C下合成的三维团簇阵列的电子和振动光谱以及掠入射全X射线散射测量结果一致。在聚合物薄膜内直接合成少数原子过渡金属硫化物团簇,将为包括太阳能收集和转换应用在内的光吸收材料的精密结构提供一条通用的新途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/e5ec02202224/ANIE-64-e202421259-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/b78cf9178d0d/ANIE-64-e202421259-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/9e00e38e0099/ANIE-64-e202421259-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/cc9d12c84f12/ANIE-64-e202421259-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/89e6bc5cdef5/ANIE-64-e202421259-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/67a415c6d65f/ANIE-64-e202421259-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/75cf45fe4b29/ANIE-64-e202421259-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/e5ec02202224/ANIE-64-e202421259-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/b78cf9178d0d/ANIE-64-e202421259-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/9e00e38e0099/ANIE-64-e202421259-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/cc9d12c84f12/ANIE-64-e202421259-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/89e6bc5cdef5/ANIE-64-e202421259-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/67a415c6d65f/ANIE-64-e202421259-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/75cf45fe4b29/ANIE-64-e202421259-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c70f/11878342/e5ec02202224/ANIE-64-e202421259-g003.jpg

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