Xiao Zhilin, Zeng Binghuan, Xu Fang, Liu Guangjian, Zhou Hua, Chen Jiaqi, Fei Linfeng, Liao Xiaxia, Yuan Jiaren, Zhou Yangbo
School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China.
Jiangxi Provincial Key Laboratory of Photodetectors, School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China.
Nanoscale. 2025 Feb 20;17(8):4465-4471. doi: 10.1039/d4nr03685a.
Exploring high-κ gate dielectrics is crucial for the achievement of high-performance field-effect transistors (FETs). Here, we report the synthesis of a few-layer wide bandgap semiconductor gallium thiophosphate (GaPS), which can be easily mechanically exfoliated from a bulk material. The few-layered GaPS flakes exhibit a relative dielectric constant of approximately 5.3. Two-dimensional (2D) van der Waals heterostructure FETs utilizing atomically smooth GaPS flakes as the top-gate dielectric layer and MoS as the channel material were fabricated, showing a high on-off ratio exceeding 10 with a subthreshold swing as low as 80 mV per decade. Our findings indicate that few-layer GaPS is a high-performance dielectric candidate for two-dimensional transistors, which enrich the high-κ 2D community and pave the way for fabricating modern electronic devices.
探索高κ栅极电介质对于实现高性能场效应晶体管（FET）至关重要。在此，我们报告了几层宽带隙半导体硫代磷酸镓（GaPS）的合成，它可以很容易地从块状材料上进行机械剥离。几层的GaPS薄片表现出约5.3的相对介电常数。利用原子级光滑的GaPS薄片作为顶栅介电层和MoS作为沟道材料制备了二维（2D）范德华异质结构FET，其开/关比高达10以上，亚阈值摆幅低至每十倍频程80 mV。我们的研究结果表明，几层的GaPS是二维晶体管的高性能电介质候选材料，丰富了高κ二维材料群体，并为制造现代电子器件铺平了道路。
