Li Yumo, Sun Hao, Yue Langchun, Yang Fengxia, Dong Xiaofei, Chen Jianbiao, Chen Jiangtao, Zhang Xuqiang, Zhao Yun, Chen Kai, Li Yan
Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
J Phys Chem Lett. 2025 Feb 6;16(5):1175-1183. doi: 10.1021/acs.jpclett.4c03353. Epub 2025 Jan 23.
Research on memristive devices to seamlessly integrate and replicate the dynamic behaviors of biological synapses will illuminate the mechanisms underlying parallel processing and information storage in the human brain, thereby affording novel insights for the advancement of artificial intelligence. Here, an artificial electric synapse is demonstrated on a one-step Mo-selenized MoSe memristor, having not only long-term stable resistive switching characteristics (reset 0.51 ± 0.01 V, on/off ratio > 30, retention > 10 s) but also diverse electrically adjustable synaptic behaviors, including multilevel conductance (synaptic weight), excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/D), spike-timing-dependent plasticity (STDP), and especially activity-dependent synaptic plasticity (ADSP). More significantly, neuromorphic functions of both image edge extraction and biological perception imitation have been successfully achieved. These results present a promising design toward synaptic devices for advancing neuromorphic systems with integrated brain-like neural sensing, memory, and recognition.
对忆阻器件进行研究以无缝集成并复制生物突触的动态行为，将阐明人类大脑中并行处理和信息存储的潜在机制，从而为人工智能的发展提供新的见解。在此，在一步法制备的硒化钼（Mo-selenized MoSe）忆阻器上展示了一种人工电突触，其不仅具有长期稳定的电阻开关特性（复位电压0.51±0.01V，开/关比>30，保持时间>10s），还具有多种电可调突触行为，包括多级电导（突触权重）、兴奋性突触后电流（EPSC）、双脉冲易化（PPF）、长时程增强/抑制（LTP/D）、脉冲时间依赖可塑性（STDP），尤其是活动依赖突触可塑性（ADSP）。更重要的是，成功实现了图像边缘提取和生物感知模仿这两种神经形态功能。这些成果为推进具有集成类脑神经传感、记忆和识别功能的神经形态系统的突触器件提供了一种很有前景的设计方案。
