Wu Zhenyu, Ning Honglong, Li Han, Wei Xiaoqin, Luo Dongxiang, Yuan Dong, Liang Zhihao, Su Guoping, Yao Rihui, Peng Junbiao
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China.
The International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China.
Micromachines (Basel). 2024 Dec 26;16(1):17. doi: 10.3390/mi16010017.
The praseodymium-doped indium zinc oxide (PrIZO) thin-film transistor (TFT) is promising for applications in flat-panel displays, due to its high carrier mobility and stability. Nevertheless, there are few studies on the mechanism of annealing on PrIZO films and the fabrication of flexible devices. In this work, we first optimized the annealing-process parameters on the glass substrate. As the annealing temperature rises, the film tends to be denser and obtains a lower surface roughness, a narrower optical-band gap and less oxygen-vacancy content. However, the μ-PCD test shows the 250 °C-annealed film obtains the least defects. And the PrIZO TFT annealed at 250 °C exhibited a desired performance with a saturation mobility (μ) of 14.26 cm·V·s, a subthreshold swing (SS) of 0.14 V·dec, an interface trap density (D) of 3.17 × 10, an I/I ratio of 1.83 × 10 and a threshold voltage (Vth) of -1.15 V. The flexible devices were prepared using the optimized parameters on the Polyimide (PI) substrate and subjected to static bending tests. After bending at a radius of 5 mm, the mobility of devices decreases slightly from 12.48 to 10.87 cm·V·s, demonstrating the great potential of PrIZO for flexible displays.
掺镨铟锌氧化物（PrIZO）薄膜晶体管（TFT）因其高载流子迁移率和稳定性，在平板显示器应用中颇具前景。然而，关于PrIZO薄膜的退火机制以及柔性器件制造的研究却很少。在这项工作中，我们首先在玻璃基板上优化了退火工艺参数。随着退火温度升高，薄膜趋于致密，表面粗糙度降低，光学带隙变窄，氧空位含量减少。然而，μ-PCD测试表明，250℃退火的薄膜缺陷最少。在250℃退火的PrIZO TFT表现出理想的性能，饱和迁移率（μ）为14.26 cm·V·s，亚阈值摆幅（SS）为0.14 V·dec，界面陷阱密度（D）为3.17×10，I/I比为1.83×10，阈值电压（Vth）为-1.15 V。使用优化参数在聚酰亚胺（PI）基板上制备了柔性器件，并进行了静态弯曲测试。在半径为5 mm的弯曲后，器件的迁移率从12.48 cm·V·s略有下降至10.87 cm·V·s，这表明PrIZO在柔性显示器方面具有巨大潜力。
