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BK通道的内在开放源于疏水门控中的固有泄漏。

Intrinsic Opening of BK Channels Derives from Inherent Leakage in Hydrophobic Gating.

作者信息

Jia Zhiguang, Zhang Guohui, Shi Jingyi, Cui Jianmin, Chen Jianhan

机构信息

Department of Chemistry, University of Massachusetts, Amherst, MA 01003, USA.

Department of Biomedical Engineering, Center for the Investigation of Membrane Excitability Disorders, Cardiac Bioelectricity and Arrhythmia Center, Washington University, St Louis, MO 63130, USA.

出版信息

bioRxiv. 2025 Jan 19:2025.01.13.632877. doi: 10.1101/2025.01.13.632877.

Abstract

The big potassium (BK) channels remain open with a small limiting probability of ~ 10 at minimal Ca and negative voltages < -100 mV. The molecular origin and functional significance of such "intrinsic opening" are not understood. Here we combine atomistic simulations and electrophysiological experiments to show that the intrinsic opening of BK channels is an inherent property of the vapor barrier, generated by hydrophobic dewetting of the BK inner pore in the deactivated state. The vapor barrier only gives rise to a finite free energy barrier, of ~ 8 kcal/mol, and cannot completely shut down K flow even when the voltage sensor domains are fully deactivated. This results in the leaking currents that can be measured at negative voltages as the indication of intrinsic opening. The shallow limiting slope of at negative voltages results primarily from the electric field effects on the permeating ion through the vapor barrier. We further demonstrate that the vapor barrier can be perturbed by inner pore mutations and truncation of the cytosolic domains, leading to predicable changes in limiting slope measurements. Therefore, the intrinsic opening in BK channels, and possibly in other ion channels, opens up an opportunity to experimentally study hydrophobic gating. Our results further suggest that intrinsic opening in BK channels is the fundamental basis for the allosteric mechanism of activation by both voltage and Ca.

摘要

大电导钙激活钾(BK)通道在极低钙浓度和低于 -100 mV 的负电压下以约 10 的小极限概率保持开放。这种“内在开放”的分子起源和功能意义尚不清楚。在这里,我们结合原子模拟和电生理实验表明,BK 通道的内在开放是由失活状态下 BK 内孔的疏水去湿产生的气相屏障的固有特性。气相屏障仅产生约 8 千卡/摩尔的有限自由能屏障,即使电压传感器结构域完全失活,也不能完全阻止钾离子流动。这导致在负电压下可测量的泄漏电流,作为内在开放的指示。负电压下 的浅极限斜率主要是由电场对通过气相屏障的渗透离子的影响所致。我们进一步证明,气相屏障可被内孔突变和胞质结构域的截断所扰动,导致极限斜率测量值发生可预测的变化。因此,BK 通道以及可能其他离子通道中的内在开放,为实验研究疏水门控提供了机会。我们的结果进一步表明,BK 通道中的内在开放是电压和钙激活的变构机制的基本基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d82/11760684/f58d5e3b76bb/nihpp-2025.01.13.632877v1-f0001.jpg

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